A coupled cavity Fabry-Perot silicon electro-optic modulator for X 3 and 1. 5 jun is proposed and analyzed. The modulator consists of alternated slabs with high (silicon) and low (Si02 or air) refractive iixlex arI can be realized by standard microelectronic technique. Varying the optical properties of the silicon slabs by carrier injection it is possible to modulate tl light intensity transmitted across the device. The small size and the low current values requiitd to drive it ai compatible with a small scale integration.
Silicon modulator for integrated optics / G., Cocorullo; F. G., Della Corte; I., Rendina; A., Cutolo; DELLA CORTE, Francesco Giuseppe. - 1374:(1991). (Intervento presentato al convegno PHOTONICS WEST 1990 tenutosi a San Jose (CA, USA)) [10.1117/12.24964].
Silicon modulator for integrated optics
DELLA CORTE, Francesco Giuseppe
1991-01-01
Abstract
A coupled cavity Fabry-Perot silicon electro-optic modulator for X 3 and 1. 5 jun is proposed and analyzed. The modulator consists of alternated slabs with high (silicon) and low (Si02 or air) refractive iixlex arI can be realized by standard microelectronic technique. Varying the optical properties of the silicon slabs by carrier injection it is possible to modulate tl light intensity transmitted across the device. The small size and the low current values requiitd to drive it ai compatible with a small scale integration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
