A theoretical study aimed at the optimum design of thermo- optic guided-wave switches realized in silicon-on-oxide technology is reported. The heat transfer processes occurring inside such devices are analyzed by means of a 3D finite element thermal simulator. In particular, in rib waveguiding structures, we demonstrate that the optimum values of the oxide layer thickness and of the outer rib height are a function of the heating pulse power used to drive the device. The theoretical results carried out are consistent with the experiments reported in literature.

Silicon-on-insulator guided-wave structures for thermo-optic switching applications

DELLA CORTE, Francesco Giuseppe
1997-01-01

Abstract

A theoretical study aimed at the optimum design of thermo- optic guided-wave switches realized in silicon-on-oxide technology is reported. The heat transfer processes occurring inside such devices are analyzed by means of a 3D finite element thermal simulator. In particular, in rib waveguiding structures, we demonstrate that the optimum values of the oxide layer thickness and of the outer rib height are a function of the heating pulse power used to drive the device. The theoretical results carried out are consistent with the experiments reported in literature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/14962
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