This paper introduces a novel rectifier circuit based on a Bipolar Junction Transistor (BJT) driven into deep saturation. By connecting a resistor between the base and collector, the BJT functions as a rectifier, where the majority of the current is diverted through the external resistor. This configuration significantly reduces the power dissipated within the BJT itself, with the collector-emitter saturation voltage (V CEsat) being a small fraction of the base-emitter saturation voltage (VbEsat). The result is a substantial decrease in the thermal stress on the semiconductor device compared to a conventional diode rectifier of similar size, which is expected to improve the Mean Time Between Failures (MTBF). This work presents a detailed analysis, supported by circuit simulations of a Full Wave Rectifier, demonstrating that the power dissipated in the BJT is significantly lower than in an equivalent diodebased circuit, highlighting its potential for high-efficiency and high-reliability power applications.
Reduced BJT Power Dissipation via Saturated Operation in Full Wave Rectifiers / Carotenuto, Riccardo; Iero, Demetrio; Merenda, Massimo; Della Corte, Francesco G.. - (2025), pp. 1-4. ( 31st International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2025 ita 2025) [10.1109/therminic65879.2025.11216903].
Reduced BJT Power Dissipation via Saturated Operation in Full Wave Rectifiers
Carotenuto, Riccardo;Iero, Demetrio;Merenda, Massimo;Della Corte, Francesco G.
2025-01-01
Abstract
This paper introduces a novel rectifier circuit based on a Bipolar Junction Transistor (BJT) driven into deep saturation. By connecting a resistor between the base and collector, the BJT functions as a rectifier, where the majority of the current is diverted through the external resistor. This configuration significantly reduces the power dissipated within the BJT itself, with the collector-emitter saturation voltage (V CEsat) being a small fraction of the base-emitter saturation voltage (VbEsat). The result is a substantial decrease in the thermal stress on the semiconductor device compared to a conventional diode rectifier of similar size, which is expected to improve the Mean Time Between Failures (MTBF). This work presents a detailed analysis, supported by circuit simulations of a Full Wave Rectifier, demonstrating that the power dissipated in the BJT is significantly lower than in an equivalent diodebased circuit, highlighting its potential for high-efficiency and high-reliability power applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
