Raman and electrical characterization of boron-doped homoepitaxial diamond used for the realization of diamond based mult-ilayered Schottky diode detectors / Faggio, G., Messina, G., Prestopino, G., Marinelli, M., Santangelo, S.. - (2012). (“ICDCM”, International Conference on Diamond and Carbon Materials Granada (E) 2–6 September 2012).
Raman and electrical characterization of boron-doped homoepitaxial diamond used for the realization of diamond based mult-ilayered Schottky diode detectors
G. Faggio;MESSINA, Giacomo;SANTANGELO, Saveria
2012-01-01
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