A series of boron-doped homoepitaxial diamond flms grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifcations in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the frst-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.
Raman Scattering in heavily Boron-doped single-crystal diamond / Messina, Giacomo; D., Alfieri; G., Prestopino; I., Ciancaglioni; M., Marinelli; Santangelo, Saveria; Faggio, Giuliana. - 89:(2011), pp. C1V89S1P032-1-C1V89S1P032-4. (Intervento presentato al convegno ELSXIII, 13th International Conference on Electromagnetic and Light Scattering tenutosi a Taormina (ME), 26-30 September 2011) [10.1478/C1V89S1P032].
Raman Scattering in heavily Boron-doped single-crystal diamond
MESSINA, Giacomo;SANTANGELO, Saveria;FAGGIO, GIULIANA
2011-01-01
Abstract
A series of boron-doped homoepitaxial diamond flms grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifcations in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the frst-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
