The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperature
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes / Rao, S.; Pangallo, G.; DELLA CORTE, Francesco Giuseppe. - In: PROCEDIA ENGINEERING. - ISSN 1877-7058. - 168:(2016), pp. 729-732. (Intervento presentato al convegno 30th Eurosensors Conference, Eurosensors 2016; Budapest; Hungary; 4 September 2016 through 7 September 2016 tenutosi a Budapest, Hungary nel 4 September 2016 through 7 September 2016) [10.1016/j.proeng.2016.11.262].
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes
Rao, S.
;Francesco Della Corte
2016-01-01
Abstract
The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperatureI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
