The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperature
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes
Rao, S.
;Francesco Della Corte
2016-01-01
Abstract
The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperatureFile in questo prodotto:
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