Hydrogenated amorphous silicon (a-Si:H) is recently emerging as a promising material to provide microchips with passive and active photonic functions through a back-end and CMOS-compatible technological process. In this paper, we discuss the performances achieved with different configurations of a-Si:H-based electro-optical amplitude modulators integrated into passive waveguides. All of the analyzed devices are based on the plasma dispersion effect, a phenomenon that allows to reach useful performances at the communication wavelengths of λ∼1.55 μm. Mixed electro-optic simulations, in both steady state and transient conditions, for optimized active photonic devices are finally presented. © 2014 AEIT.
CMOS-compatible amorphous silicon photonic layer integrated with VLSI electronics / Rao, S.; DELLA CORTE, Francesco Giuseppe; Coppola, G.; Casalino, M.; Gioffrè, Mariano. - (2014). (Intervento presentato al convegno 2014 Fotonica AEIT Italian Conference on Photonics Technologies, Fotonica AEIT 2014) [10.1109/Fotonica.2014.6843880].
CMOS-compatible amorphous silicon photonic layer integrated with VLSI electronics
S. Rao
;Francesco Della Corte;
2014-01-01
Abstract
Hydrogenated amorphous silicon (a-Si:H) is recently emerging as a promising material to provide microchips with passive and active photonic functions through a back-end and CMOS-compatible technological process. In this paper, we discuss the performances achieved with different configurations of a-Si:H-based electro-optical amplitude modulators integrated into passive waveguides. All of the analyzed devices are based on the plasma dispersion effect, a phenomenon that allows to reach useful performances at the communication wavelengths of λ∼1.55 μm. Mixed electro-optic simulations, in both steady state and transient conditions, for optimized active photonic devices are finally presented. © 2014 AEIT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
