Hydrogenated amorphous silicon (a-Si:H) is recently emerging as a promising material to provide microchips with passive and active photonic functions through a back-end and CMOS-compatible technological process. In this paper, we discuss the performances achieved with different configurations of a-Si:H-based electro-optical amplitude modulators integrated into passive waveguides. All of the analyzed devices are based on the plasma dispersion effect, a phenomenon that allows to reach useful performances at the communication wavelengths of λ∼1.55 μm. Mixed electro-optic simulations, in both steady state and transient conditions, for optimized active photonic devices are finally presented. © 2014 AEIT.

CMOS-compatible amorphous silicon photonic layer integrated with VLSI electronics / Rao, S.; DELLA CORTE, Francesco Giuseppe; Coppola, G.; Casalino, M.; Gioffrè, Mariano. - (2014). (Intervento presentato al convegno 2014 Fotonica AEIT Italian Conference on Photonics Technologies, Fotonica AEIT 2014) [10.1109/Fotonica.2014.6843880].

CMOS-compatible amorphous silicon photonic layer integrated with VLSI electronics

S. Rao
;
Francesco Della Corte;
2014-01-01

Abstract

Hydrogenated amorphous silicon (a-Si:H) is recently emerging as a promising material to provide microchips with passive and active photonic functions through a back-end and CMOS-compatible technological process. In this paper, we discuss the performances achieved with different configurations of a-Si:H-based electro-optical amplitude modulators integrated into passive waveguides. All of the analyzed devices are based on the plasma dispersion effect, a phenomenon that allows to reach useful performances at the communication wavelengths of λ∼1.55 μm. Mixed electro-optic simulations, in both steady state and transient conditions, for optimized active photonic devices are finally presented. © 2014 AEIT.
2014
9788887237177
Computer simulation
Photonic devices
Silicon, Active photonic devices
Cmos photonics
Communication wavelengths
Hydrogenated amorphous silicon (a-Si:H)
Photonic integrated circuits
Plasma dispersion effects
Steady state and transients
Technological process, Amorphous silicon
Amorphous silicon
CMOS photonics
Numerical simulations
Photonic integrated circuits
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/61927
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