In this paper we report results on a field-effect induced light modulation at λ= 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped α-Si:H layers. The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (α-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state. © 2010 IEEE.
Electro-optical modulation and photoinduced absorption effects on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide / Rao, S.; Della Corte, F. G.. - (2010), pp. 1135-1141. (Intervento presentato al convegno 15th IEEE Mediterranean Electrotechnical Conference, MELECON 2010 tenutosi a Valletta, mlt nel 2010) [10.1109/MELCON.2010.5476363].
Electro-optical modulation and photoinduced absorption effects on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide
Rao S.
;Della Corte F. G.
2010-01-01
Abstract
In this paper we report results on a field-effect induced light modulation at λ= 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped α-Si:H layers. The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (α-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state. © 2010 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
