RAO, Sandro
 Distribuzione geografica
Continente #
EU - Europa 157
AS - Asia 87
NA - Nord America 77
AF - Africa 6
SA - Sud America 2
Totale 329
Nazione #
IT - Italia 100
US - Stati Uniti d'America 77
VN - Vietnam 17
CN - Cina 16
JP - Giappone 15
IN - India 13
LT - Lituania 9
SG - Singapore 8
RU - Federazione Russa 7
CZ - Repubblica Ceca 6
DE - Germania 6
FR - Francia 6
IR - Iran 6
UA - Ucraina 6
FI - Finlandia 5
AT - Austria 4
ID - Indonesia 4
DZ - Algeria 3
KR - Corea 3
NL - Olanda 3
BR - Brasile 2
ES - Italia 2
HK - Hong Kong 2
SE - Svezia 2
UZ - Uzbekistan 2
GB - Regno Unito 1
KE - Kenya 1
MA - Marocco 1
NG - Nigeria 1
TW - Taiwan 1
Totale 329
Città #
Boardman 25
Reggio Calabria 23
Dong Ket 15
Columbus 14
Vibo Valentia 12
Milazzo 11
Taurianova 7
Cosenza 6
Gurgaon 5
Redmond 5
Reggio Di Calabria 5
Tokyo 5
Beijing 4
Delhi 4
Helsinki 4
Jakarta 4
Los Angeles 4
Rome 4
Singapore 4
Turin 4
Vienna 4
Ashburn 3
Brescia 3
Las Vegas 3
Milan 3
Nuremberg 3
Tappahannock 3
Xi'an 3
Bologna 2
Chengdu 2
Chongqing 2
Durham 2
Fayetteville 2
Gardena 2
Ho Chi Minh City 2
Jersey City 2
Kherson 2
Martina Franca 2
Moscow 2
Munich 2
Palo Alto 2
Paris 2
Riposto 2
Stockholm 2
São Bernardo do Campo 2
Woodbridge 2
Absecon 1
Bangalore 1
Bisceglie 1
Catanzaro 1
Central District 1
Council Bluffs 1
Crosia 1
Duncan 1
Fleming Island 1
Frankfurt am Main 1
Gangnam-gu 1
Hangzhou 1
Jyväskylä 1
Khenchela 1
Kowloon 1
Marrakesh 1
Miharudai 1
Milpitas 1
Mumbai 1
Nanterre 1
Napoli 1
New Brunswick 1
New Delhi 1
Osaka 1
Pittsburgh 1
Pohang 1
Polistena 1
Sekizawa 1
Seoul 1
Shenzhen 1
Taichung 1
Tlemcen 1
Uyo 1
Warwick 1
Yokkaichi 1
Zoetermeer 1
Totale 262
Nome #
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047588-2c09-7e24-e053-6605fe0afb29 88
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047588-1391-7e24-e053-6605fe0afb29 46
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047588-1367-7e24-e053-6605fe0afb29 42
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047588-318f-7e24-e053-6605fe0afb29 31
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics, file e2047588-3f9a-7e24-e053-6605fe0afb29 23
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure, file e2047586-a72a-7e24-e053-6605fe0afb29 11
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047588-130e-7e24-e053-6605fe0afb29 11
Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm, file e2047589-b865-7e24-e053-6605fe0afb29 9
Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm, file 66e901a1-9c70-45b1-9672-8856dd5f9b5f 7
High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results, file 70bb48a3-1dde-429a-a001-e8940a6863ee 7
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047587-4868-7e24-e053-6605fe0afb29 5
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode, file e2047588-3696-7e24-e053-6605fe0afb29 5
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents, file e2047588-392f-7e24-e053-6605fe0afb29 5
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors, file e2047588-3d1c-7e24-e053-6605fe0afb29 5
New perspectives in silicon micro and nanophotonics, file e2047588-38f8-7e24-e053-6605fe0afb29 4
A technique for improving the precision of the direct measurement of junction temperature in power light-emitting diodes, file e2047588-f52a-7e24-e053-6605fe0afb29 4
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047587-40db-7e24-e053-6605fe0afb29 3
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047587-4865-7e24-e053-6605fe0afb29 3
An efficient 4h-sic photodiode for uv sensing applications, file e2047589-8a56-7e24-e053-6605fe0afb29 3
Accurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nm, file 364a8204-1a78-4384-9fdb-74580d0dbd3f 2
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047587-434a-7e24-e053-6605fe0afb29 2
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047587-62b5-7e24-e053-6605fe0afb29 2
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model, file e2047588-3437-7e24-e053-6605fe0afb29 2
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor, file e2047588-392d-7e24-e053-6605fe0afb29 2
An Ultralow-Voltage Energy-Efficient Level Shifter, file e2047588-3d1a-7e24-e053-6605fe0afb29 2
Power LED junction temperature readout circuit based on an off-the-shelf LED driver, file e2047589-7054-7e24-e053-6605fe0afb29 2
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode, file e2047588-345d-7e24-e053-6605fe0afb29 1
Capacitance in Waveguide-Integrated Hydrogenated Amorphous Silicon p-i-n Diodes for Active Photonic Devices, file e2047588-3867-7e24-e053-6605fe0afb29 1
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes, file e2047588-3a29-7e24-e053-6605fe0afb29 1
Low energy/delay overhead level shifter for wide-range voltage conversion, file e2047588-3f59-7e24-e053-6605fe0afb29 1
Totale 330
Categoria #
all - tutte 1.217
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.217


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202186 0 0 0 0 0 2 2 38 19 8 1 16
2021/202260 1 0 5 5 1 6 7 6 3 6 17 3
2022/202379 6 3 3 10 7 7 16 3 6 4 12 2
2023/2024105 1 4 0 2 14 3 6 8 2 15 23 27
Totale 330