IRIS
RAO, Sandro
 Distribuzione geografica
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Continente #
EU - Europa 141
AS - Asia 86
NA - Nord America 49
AF - Africa 6
SA - Sud America 2
Totale 284
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Nazione #
IT - Italia 94
US - Stati Uniti d'America 49
VN - Vietnam 17
CN - Cina 16
JP - Giappone 15
IN - India 13
LT - Lituania 9
SG - Singapore 8
CZ - Repubblica Ceca 6
IR - Iran 6
FR - Francia 5
RU - Federazione Russa 5
AT - Austria 4
ID - Indonesia 4
UA - Ucraina 4
DE - Germania 3
DZ - Algeria 3
FI - Finlandia 3
NL - Olanda 3
BR - Brasile 2
ES - Italia 2
HK - Hong Kong 2
KR - Corea 2
SE - Svezia 2
UZ - Uzbekistan 2
GB - Regno Unito 1
KE - Kenya 1
MA - Marocco 1
NG - Nigeria 1
TW - Taiwan 1
Totale 284
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Città #
Reggio Calabria 23
Dong Ket 15
Vibo Valentia 12
Milazzo 11
Boardman 7
Taurianova 7
Cosenza 6
Columbus 5
Gurgaon 5
Redmond 5
Reggio Di Calabria 5
Tokyo 5
Beijing 4
Delhi 4
Jakarta 4
Los Angeles 4
Singapore 4
Turin 4
Vienna 4
Ashburn 3
Las Vegas 3
Rome 3
Tappahannock 3
Xi'an 3
Chengdu 2
Chongqing 2
Durham 2
Fayetteville 2
Gardena 2
Helsinki 2
Ho Chi Minh City 2
Jersey City 2
Kherson 2
Martina Franca 2
Moscow 2
Munich 2
Palo Alto 2
Paris 2
Riposto 2
Stockholm 2
São Bernardo do Campo 2
Woodbridge 2
Absecon 1
Bangalore 1
Bisceglie 1
Bologna 1
Brescia 1
Catanzaro 1
Central District 1
Council Bluffs 1
Crosia 1
Duncan 1
Fleming Island 1
Frankfurt am Main 1
Gangnam-gu 1
Hangzhou 1
Jyväskylä 1
Khenchela 1
Kowloon 1
Marrakesh 1
Miharudai 1
Milan 1
Milpitas 1
Mumbai 1
Nanterre 1
Napoli 1
New Brunswick 1
New Delhi 1
Osaka 1
Pittsburgh 1
Pohang 1
Polistena 1
Sekizawa 1
Shenzhen 1
Taichung 1
Tlemcen 1
Uyo 1
Warwick 1
Yokkaichi 1
Zoetermeer 1
Totale 223
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Nome #
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047588-2c09-7e24-e053-6605fe0afb29 82
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047588-1391-7e24-e053-6605fe0afb29 41
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047588-1367-7e24-e053-6605fe0afb29 38
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047588-318f-7e24-e053-6605fe0afb29 29
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics, file e2047588-3f9a-7e24-e053-6605fe0afb29 18
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047588-130e-7e24-e053-6605fe0afb29 11
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure, file e2047586-a72a-7e24-e053-6605fe0afb29 10
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047587-4868-7e24-e053-6605fe0afb29 5
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode, file e2047588-3696-7e24-e053-6605fe0afb29 5
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents, file e2047588-392f-7e24-e053-6605fe0afb29 5
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors, file e2047588-3d1c-7e24-e053-6605fe0afb29 5
New perspectives in silicon micro and nanophotonics, file e2047588-38f8-7e24-e053-6605fe0afb29 4
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047587-40db-7e24-e053-6605fe0afb29 3
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047587-4865-7e24-e053-6605fe0afb29 3
A technique for improving the precision of the direct measurement of junction temperature in power light-emitting diodes, file e2047588-f52a-7e24-e053-6605fe0afb29 3
Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm, file e2047589-b865-7e24-e053-6605fe0afb29 3
High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results, file 70bb48a3-1dde-429a-a001-e8940a6863ee 2
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047587-434a-7e24-e053-6605fe0afb29 2
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047587-62b5-7e24-e053-6605fe0afb29 2
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model, file e2047588-3437-7e24-e053-6605fe0afb29 2
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor, file e2047588-392d-7e24-e053-6605fe0afb29 2
An Ultralow-Voltage Energy-Efficient Level Shifter, file e2047588-3d1a-7e24-e053-6605fe0afb29 2
Power LED junction temperature readout circuit based on an off-the-shelf LED driver, file e2047589-7054-7e24-e053-6605fe0afb29 2
An efficient 4h-sic photodiode for uv sensing applications, file e2047589-8a56-7e24-e053-6605fe0afb29 2
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode, file e2047588-345d-7e24-e053-6605fe0afb29 1
Capacitance in Waveguide-Integrated Hydrogenated Amorphous Silicon p-i-n Diodes for Active Photonic Devices, file e2047588-3867-7e24-e053-6605fe0afb29 1
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes, file e2047588-3a29-7e24-e053-6605fe0afb29 1
Low energy/delay overhead level shifter for wide-range voltage conversion, file e2047588-3f59-7e24-e053-6605fe0afb29 1
Totale 285
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Categoria #
all - tutte 1.106
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.106
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202186 0 0 0 0 0 2 2 38 19 8 1 16
2021/202260 1 0 5 5 1 6 7 6 3 6 17 3
2022/202379 6 3 3 10 7 7 16 3 6 4 12 2
2023/202460 1 4 0 2 14 3 6 8 2 15 5 0
Totale 285