A study on power light-emitting diode (LED) junction temperature sensing based on the measurements of its forward voltage is presented. The linear dependence on temperature of the voltage drop across a power LED in the wide temperature range from T = 35 up to 175°C, for different bias currents, is investigated. The experimental measurements., repeated on three devices with the same parts number, exhibit a good degree of linearity. Moreover, the proposed sensors have excellent performances at the bias current of 1.4 RNA with good repeatability and maintaining a stable output over more cycles of measurements.

A Direct Junction Temperature Measurement Technique for Power LEDs

Giovanni Pangallo;Riccardo Carotenuto;Demetrio Iero;Massimo Merenda;Sandro Rao;Francesco Della Corte
2018

Abstract

A study on power light-emitting diode (LED) junction temperature sensing based on the measurements of its forward voltage is presented. The linear dependence on temperature of the voltage drop across a power LED in the wide temperature range from T = 35 up to 175°C, for different bias currents, is investigated. The experimental measurements., repeated on three devices with the same parts number, exhibit a good degree of linearity. Moreover, the proposed sensors have excellent performances at the bias current of 1.4 RNA with good repeatability and maintaining a stable output over more cycles of measurements.
978-153865375-3
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12318/16124
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