A study on power light-emitting diode (LED) junction temperature sensing based on the measurements of its forward voltage is presented. The linear dependence on temperature of the voltage drop across a power LED in the wide temperature range from T = 35 up to 175°C, for different bias currents, is investigated. The experimental measurements., repeated on three devices with the same parts number, exhibit a good degree of linearity. Moreover, the proposed sensors have excellent performances at the bias current of 1.4 RNA with good repeatability and maintaining a stable output over more cycles of measurements.
A Direct Junction Temperature Measurement Technique for Power LEDs / Pangallo, Giovanni; Carotenuto, Riccardo; Iero, Demetrio; Mallemace, Elisa; Merenda, Massimo; Rao, Sandro; DELLA CORTE, Francesco Giuseppe. - (2018). (Intervento presentato al convegno 9th IEEE International Workshop on Applied Measurements for Power Systems, AMPS 2018; tenutosi a Bologna nel 2018) [10.1109/AMPS.2018.8494841].
A Direct Junction Temperature Measurement Technique for Power LEDs
Giovanni Pangallo;Riccardo Carotenuto;Demetrio Iero;Massimo Merenda;Sandro Rao;Francesco Della Corte
2018-01-01
Abstract
A study on power light-emitting diode (LED) junction temperature sensing based on the measurements of its forward voltage is presented. The linear dependence on temperature of the voltage drop across a power LED in the wide temperature range from T = 35 up to 175°C, for different bias currents, is investigated. The experimental measurements., repeated on three devices with the same parts number, exhibit a good degree of linearity. Moreover, the proposed sensors have excellent performances at the bias current of 1.4 RNA with good repeatability and maintaining a stable output over more cycles of measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
