Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm 2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.
Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics / Pezzimenti, F.; Della Corte, F. G.. - (2012), pp. 347-350. (Intervento presentato al convegno 35th International Semiconductor Conference, CAS 2012 tenutosi a Sinaia - Romania nel ottobre 2012) [10.1109/SMICND.2012.6400764].
Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics
F. Pezzimenti
;F. G. Della Corte
2012-01-01
Abstract
Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm 2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
