Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm 2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

F. Pezzimenti
;
F. G. Della Corte
2012

Abstract

Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm 2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.
978-146730736-9
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12318/18051
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