PEZZIMENTI, Fortunato

PEZZIMENTI, Fortunato  

Dipartimento di Ingegneria dell'Informazione, delle Infrastrutture e dell'Energia Sostenibile  

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Risultati 1 - 20 di 83 (tempo di esecuzione: 0.101 secondi).
Titolo Data di pubblicazione Autore(i) File
An a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency 1-gen-2001 Della Corte, F. G.; Pezzimenti, F.
Acoustic simulation for performance evaluation of ultrasonic ranging systems 1-gen-2021 Carotenuto, R.; Pezzimenti, F.; Della Corte, F. G.; Iero, D.; Merenda, M.
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions 1-gen-2020 Bencherif, H.; Pezzimenti, F.; Dehimi, L.; Della Corte, F.
Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET 1-gen-2019 Bencherif, H.; Yousfi, A.; Dehimi, L.; Pezzimenti, F.; Della Corte, F. G.
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes 1-gen-2015 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.
Analysis of I–V–T Characteristics of Au/n-InP Schottky barrier diodes with modeling of nanometer-sized patches at low temperature 1-gen-2019 Fritah, A.; Dehimi, L.; Pezzimenti, F.; Saadoune, A.; Abay, B.
Analysis of the current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for high performance temperature sensors 1-gen-2019 Zeghdar, K.; Bencherif, H.; Dehimi, L.; Pezzimenti, F.; Della Corte, F. G.
Analysis of the electrical characteristics of Mo/4H-SiC Schottky barrier diodes for temperature sensing applications 1-gen-2020 Zeghdar, K.; Dehimi, L.; Pezzimenti, F.; Megherbi, M. L.; Della Corte, F. G.
Analysis of the forward I–V characteristics of Al-implanted 4H-SiC p-i-n diodes with modeling of recombination and trapping effects due to intrinsic and doping-induced defect states 1-gen-2018 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Saadoune, A.; Della Corte, F. G.
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes 1-gen-2018 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Saadoune, A.; Della Corte, F. G.
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 1-gen-2009 Pezzimenti, F.; Freda Albanese, L.; Bellone, S.; Della Corte, F. G.
Analytical model for the light trapping effect on ZnO:Al/c-Si/SiGe/c-Si solar cells with an optimized design 1-gen-2019 Bencherif, H.; Dehimi, L.; Pezzimenti, F.; Yousfi, A.
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 1-gen-2011 Bellone, S.; Della Corte, F. G.; Freda Albanese, L.; Pezzimenti, F.
Analytical modeling of dual-junction tandem solar cells based on an InGaP/GaAs heterojunction stacked on a Ge substrate 1-gen-2019 Bouzid, F.; Pezzimenti, F.; Dehimi, L.; Della Corte, F. G.; Hadjab, M.; Hadj Larbi, A.
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET 1-gen-2019 Pezzimenti, F.; Bencherif, H.; Yousfi, A.; Dehimi, L.
Design and modeling of a novel 4H-SiC normally-off BMFET transistor for power applications 1-gen-2010 Pezzimenti, F.; Della Corte, F.
Design and numerical characterization of a low voltage power MOSFET in 4H-SiC for photovoltaic applications 1-gen-2017 De Martino, G.; Pezzimenti, F.; Della Corte, F. G.; Adinolfi, G.; Graditi, G.
Design and simulation of a high efficiency CdS/CdTe solar cell 1-gen-2020 Tinedert, I. E.; Pezzimenti, F.; Megherbi, M. L.; Saadoune, A.
Design and simulation of an a-Si:H/GaAs HBT with improved DC and high frequency characteristics 1-gen-2003 Pezzimenti, F.; Della Corte, F. G.
Design and simulation of an a-Si:H/GaAs Heterojunction Bipolar Transistor 1-gen-2002 Della Corte, F. G.; Pezzimenti, F.