DE MARTINO, Giuseppe
 Distribuzione geografica
Continente #
AS - Asia 109
EU - Europa 84
NA - Nord America 42
AF - Africa 20
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 257
Nazione #
US - Stati Uniti d'America 39
IT - Italia 32
CN - Cina 30
VN - Vietnam 17
JP - Giappone 16
IN - India 12
FR - Francia 10
KR - Corea 10
TW - Taiwan 10
CZ - Repubblica Ceca 8
DE - Germania 8
DZ - Algeria 8
ET - Etiopia 6
RU - Federazione Russa 6
KZ - Kazakistan 5
NL - Olanda 4
EG - Egitto 3
FI - Finlandia 3
IR - Iran 3
MY - Malesia 3
UA - Ucraina 3
CH - Svizzera 2
GB - Regno Unito 2
HK - Hong Kong 2
MA - Marocco 2
MX - Messico 2
SE - Svezia 2
AT - Austria 1
BO - Bolivia 1
CA - Canada 1
EU - Europa 1
GR - Grecia 1
ID - Indonesia 1
NG - Nigeria 1
RO - Romania 1
RS - Serbia 1
Totale 257
Città #
Hanoi 13
Addis Ababa 6
Bitonto 6
Reggio Calabria 6
Shanghai 5
Atlanta 4
Columbus 4
Cosenza 4
Guangzhou 4
Council Bluffs 3
Gif-sur-yvette 3
Hangzhou 3
Los Angeles 3
Philadelphia 3
Shenzhen 3
Taipei 3
Tokyo 3
Alexandria 2
Amagasaki 2
Beijing 2
Chengdu 2
Dalmine 2
Dong Ket 2
Frankfurt am Main 2
Gangbuk-gu 2
Hebei 2
Helsinki 2
Ho Chi Minh City 2
Houston 2
Isfahan 2
Kanasin 2
Krasnodar 2
Kuala Lumpur 2
Le Chesnay 2
Marrakesh 2
Nanjing 2
New Delhi 2
Reggio Di Calabria 2
Tirupur 2
Zhubei 2
Amiens 1
Ashburn 1
Bangalore 1
Bari 1
Batna City 1
Bedford 1
Boardman 1
Bogen 1
Casoria 1
Central District 1
Chicago 1
Columbia 1
Dallas 1
Des Moines 1
Dortmund 1
Dresden 1
Duncan 1
Elmira 1
Espoo 1
Gießen 1
Giugliano in Campania 1
Guishan 1
Herndon 1
Hsinchu 1
Jakarta 1
Kobe 1
La Paz 1
Lomma 1
Manchester 1
Marina Di Gioiosa 1
Mumbai 1
Nagoya 1
New Taipei 1
Ocala 1
Oran 1
Ottawa 1
Palo Alto 1
Psychiko 1
Saint Petersburg 1
Sala 1
Salerno 1
Seoul 1
Seremban 1
Soeul 1
Suginami-ku 1
Sunnyvale 1
Tainan City 1
Tazmalt 1
Tsukuba 1
Tsurumi 1
Utica 1
Vellore 1
Versailles 1
Vienna 1
Wuhan 1
Zurich 1
Totale 178
Nome #
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications, file e2047588-1219-7e24-e053-6605fe0afb29 124
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications, file e2047588-118f-7e24-e053-6605fe0afb29 119
Study and design of silicon carbide power MOSFETs for low voltage applications, file e2047586-e040-7e24-e053-6605fe0afb29 8
Study and assessment of defect and trap effects on the current capabilities of a 4h-sic-based power mosfet, file e2047588-7cc3-7e24-e053-6605fe0afb29 3
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications, file e2047587-480b-7e24-e053-6605fe0afb29 2
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications, file e2047587-441c-7e24-e053-6605fe0afb29 1
Totale 257
Categoria #
all - tutte 716
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 716


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202124 0 0 1 0 0 0 0 6 4 4 4 5
2021/2022105 8 4 11 7 10 18 21 7 9 3 5 2
2022/202345 2 5 5 5 4 3 1 6 1 2 5 6
2023/202483 6 7 7 4 12 7 10 12 9 6 3 0
Totale 257