DE MARTINO, Giuseppe
 Distribuzione geografica
Continente #
NA - Nord America 314
AS - Asia 122
EU - Europa 95
SA - Sud America 32
AF - Africa 5
OC - Oceania 2
Totale 570
Nazione #
US - Stati Uniti d'America 310
SG - Singapore 62
IT - Italia 42
CN - Cina 31
BR - Brasile 30
DE - Germania 14
FR - Francia 8
SE - Svezia 8
GB - Regno Unito 7
HK - Hong Kong 7
IN - India 6
DZ - Algeria 5
PL - Polonia 5
BD - Bangladesh 4
ES - Italia 4
UA - Ucraina 3
VN - Vietnam 3
AU - Australia 2
CA - Canada 2
EC - Ecuador 2
FI - Finlandia 2
IR - Iran 2
UZ - Uzbekistan 2
DK - Danimarca 1
IL - Israele 1
JO - Giordania 1
JP - Giappone 1
MX - Messico 1
PK - Pakistan 1
RU - Federazione Russa 1
SA - Arabia Saudita 1
TT - Trinidad e Tobago 1
Totale 570
Città #
Chandler 56
Singapore 30
Dallas 28
San Jose 26
Ashburn 19
New York 12
San Mateo 11
Santa Clara 11
Boardman 9
Lauterbourg 8
Lawrence 8
Princeton 8
Shanghai 8
Beijing 7
Cosenza 7
Hong Kong 7
Seattle 7
Brasília 6
Wilmington 6
Ann Arbor 5
Northeim 5
Reggio Calabria 5
São Paulo 5
Warsaw 5
Cagliari 4
Houston 3
Los Angeles 3
Columbus 2
Denver 2
Des Moines 2
Helsinki 2
London 2
Madrid 2
Melbourne 2
Rio de Janeiro 2
San Francisco 2
The Dalles 2
Zanjan 2
Amman 1
Atlanta 1
Betim 1
Bitonto 1
Brooklyn 1
Canaã dos Carajás 1
Changsha 1
Chennai 1
Copenhagen 1
Cotia 1
Council Bluffs 1
Dalmine 1
Dhaka 1
Dong Ket 1
Dongguancun 1
Edinburgh 1
Four Oaks 1
Frankfurt am Main 1
Garanhuns 1
Gazipur 1
Goianápolis 1
Goiânia 1
Hanoi 1
Ho Chi Minh City 1
Hyderabad 1
Ibirubá 1
Itabira 1
Juiz de Fora 1
Juneau 1
Lagoa da Prata 1
Latina 1
Loja 1
Ludhiana 1
Mauá 1
Mexico City 1
Mumbai 1
Norfolk 1
Norwalk 1
Novo Oriente 1
Orem 1
Orenburg 1
Oshawa 1
Pathankot 1
Pelotas 1
Pittsburgh 1
Poland 1
Port of Spain 1
Praia Grande 1
Riyadh 1
Sabará 1
Samarkand 1
San Antonio 1
Secaucus 1
Shyshaky 1
Sorocaba 1
São Lourenço 1
Tashkent 1
Tokyo 1
Washington 1
Totale 390
Nome #
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications 113
Study and design of silicon carbide power MOSFETs for low voltage applications 94
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications 79
Design and numerical characterization of a low voltage power MOSFET in 4H-SiC for photovoltaic applications 66
Study and assessment of defect and trap effects on the current capabilities of a 4h-sic-based power mosfet 65
Interface trap effects in the design of a 4H-SiC MOSFET for low voltage applications 60
Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC 60
Study of a novel low breakdown voltage 4H-SiC MOSFET for PV module-level applications 56
Totale 593
Categoria #
all - tutte 4.589
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.589


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 0 0 0 0 0 0 0 0 0 0 0 1
2021/202242 0 0 11 8 0 1 0 7 2 0 3 10
2022/2023127 16 0 1 10 27 10 0 21 31 1 10 0
2023/202461 1 7 12 1 6 17 0 11 0 0 6 0
2024/2025106 4 4 7 1 21 9 7 10 16 6 7 14
2025/2026191 9 41 12 16 16 19 23 12 23 14 6 0
Totale 593