In this work, we report on the structural characterization of homoepitaxial Microwave Plasma Enhanced CVD diamond grown onto Ib diamond substrates by varying systematically the methane to hydrogen ratio in the gas mixture (1-7% CH4). X-ray diffraction, Raman spectroscopy and photoluminescence (PL) have been used to characterize the diamond samples. Raman measurements pointed out the excellent crystalline quality and phase purity of the specimens. PL measurements in the 1.7-2.7 eV energy range have shown completely flat spectra, excluding the presence of nitrogen-related optical centers. Such results show that the homoepitaxial CVD diamond can be grown, at moderate microwave power (720 W), and at growth rates not too low (∼ 1 μm/h) preserving a good quality. Moreover, the homoepitaxial crystals exhibited a strong free-exciton recombination radiation at room temperature even at the highest methane concentration used (7%). Preliminary measurements of the lifetime of the free exciton at room temperature have been also performed. The excitation was produced by a 5 ns pulsed laser irradiation at energies above the diamond band gap. The results have been compared with the structural properties of the samples and correlated with the growth conditions.

Homoepitaxial CVD diamond: Raman and time-resolved PL characterization

G. FAGGIO;MESSINA G
;
S. SANTANGELO;
2006

Abstract

In this work, we report on the structural characterization of homoepitaxial Microwave Plasma Enhanced CVD diamond grown onto Ib diamond substrates by varying systematically the methane to hydrogen ratio in the gas mixture (1-7% CH4). X-ray diffraction, Raman spectroscopy and photoluminescence (PL) have been used to characterize the diamond samples. Raman measurements pointed out the excellent crystalline quality and phase purity of the specimens. PL measurements in the 1.7-2.7 eV energy range have shown completely flat spectra, excluding the presence of nitrogen-related optical centers. Such results show that the homoepitaxial CVD diamond can be grown, at moderate microwave power (720 W), and at growth rates not too low (∼ 1 μm/h) preserving a good quality. Moreover, the homoepitaxial crystals exhibited a strong free-exciton recombination radiation at room temperature even at the highest methane concentration used (7%). Preliminary measurements of the lifetime of the free exciton at room temperature have been also performed. The excitation was produced by a 5 ns pulsed laser irradiation at energies above the diamond band gap. The results have been compared with the structural properties of the samples and correlated with the growth conditions.
HOMOEPITAXY, PHOTOLUMINESCENCE, RAMAN SPECTROSCOPY, DEFECT CHARACTERIZATION
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12318/1065
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