This paper reports about an efficient method for the numerical simulation of the electrical and optical characteristics, in both steady state and transient conditions, of free carrier injection or depletion-based electro-optical active devices, based on the low cost technology of hydrogenated amorphous silicon (a-Si:H) and related semiconducting alloys, like a-SiC:H. In particular, our experimental results, recently achieved for low-loss, birefringence free, single-modewaveguide-integrated phase modulators, are used to tune the many simulation parameters and validate the mixed electro-optic simulation environment. The tool is used to design a Mach–Zehnder Interferometer (MZI)-based modulator enhancing the performances of previous realized devices.
|Titolo:||Numerical Analysis of Electro-Optical Modulators Based on the Amorphous Silicon Technology|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||1.1 Articolo in rivista|