The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental I- V characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.
Use of 4H-SiC-based Diodes as Temperature Sensors / Della Corte, F. G.; Pangallo, G.; Rao, S.; Carotenuto, R; Iero, D.; Merenda, M.; Pezzimenti, F.. - (2019), pp. 71-74. (Intervento presentato al convegno CAS 2019 tenutosi a Sinaia, Romania nel 9-11 October 2019).
Use of 4H-SiC-based Diodes as Temperature Sensors
F. G. Della Corte;G. Pangallo;S. Rao;Carotenuto R;D. Iero;M. Merenda;F. Pezzimenti
2019-01-01
Abstract
The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental I- V characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
