The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental I- V characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.

Use of 4H-SiC-based Diodes as Temperature Sensors

F. G. Della Corte;G. Pangallo;S. Rao;Carotenuto R;D. Iero;M. Merenda;F. Pezzimenti
2019

Abstract

The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental I- V characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.
978-1-7281-1888-8
4H-SiC; sensors; temperature
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12318/13689
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