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EnglishThanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed.
| Titolo: | Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors |
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| Data di pubblicazione: | 2012 |
| Rivista: | |
| Handle: | http://hdl.handle.net/20.500.12318/1547 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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