Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot resonating cavity based both on an index- and conductivity- high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack. The device consists of a single mode a-Si:H rib waveguide containing three insulating thin layers of a-SiC:H embedded within the core thickness. The effective refractive index change, Δn eff, at the wavelength of λ=1.55 μm is achieved through the application of an electric field across the stack which induces carrier accumulation at all the a-Si:H/a-SiC:H interfaces, resulting in turn in a high interaction between the optical beam and the accumulation layers. This configuration allows to obtain a V π×L π product of about 5.9 V cm, not far from what observed in high performing electro-optical modulators in crystalline silicon.

Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product / Rao, S.; Coppola, G.; Gioffrè, M.; DELLA CORTE, Francesco Giuseppe. - In: OPTICS AND LASER TECHNOLOGY. - ISSN 0030-3992. - 45:(2013), pp. 204-208. [dx.doi.org/10.1016/j.optlastec.2012.07.003]

Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product

S. Rao;DELLA CORTE, Francesco Giuseppe
2013-01-01

Abstract

Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot resonating cavity based both on an index- and conductivity- high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack. The device consists of a single mode a-Si:H rib waveguide containing three insulating thin layers of a-SiC:H embedded within the core thickness. The effective refractive index change, Δn eff, at the wavelength of λ=1.55 μm is achieved through the application of an electric field across the stack which induces carrier accumulation at all the a-Si:H/a-SiC:H interfaces, resulting in turn in a high interaction between the optical beam and the accumulation layers. This configuration allows to obtain a V π×L π product of about 5.9 V cm, not far from what observed in high performing electro-optical modulators in crystalline silicon.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/1821
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