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EnglishWe present a graphene/n-Si Schottky junction for NH3 detection at level of few tens of parts-per-million (ppm). Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Si by drop casting. The Schottky barrier characterization towards NH3 was performed by volt-amperometric measurements in the range 10-200 ppm at bias of -3V. The characterization in the test chamber simulated environmental conditions by Relative Humidity at 50% and temperature at 295 K. Results suggest that the NH3 induces a barrier height modulation with current variations up to 4% for 200 ppm. In environmental conditions, a spontaneous restoring is observed for the device.
| Titolo: | Graphene-based Schottky device detecting NH3 at ppm level in environmental conditions |
| Autori: | |
| Data di pubblicazione: | 2014 |
| Rivista: | |
| Handle: | http://hdl.handle.net/20.500.12318/184 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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