We present a graphene/n-Si Schottky junction for NH3 detection at level of few tens of parts-per-million (ppm). Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Si by drop casting. The Schottky barrier characterization towards NH3 was performed by volt-amperometric measurements in the range 10-200 ppm at bias of -3V. The characterization in the test chamber simulated environmental conditions by Relative Humidity at 50% and temperature at 295 K. Results suggest that the NH3 induces a barrier height modulation with current variations up to 4% for 200 ppm. In environmental conditions, a spontaneous restoring is observed for the device.
Graphene-based Schottky device detecting NH3 at ppm level in environmental conditions / Polichetti, T.; Ricciardella, F.; Fedi, F.; Miglietta, M. L.; Miscioscia, R.; Massera, E.; De Vito, S.; Di Francia, G.; Nigro, M. A.; Faggio, Giuliana; Malara, A.; Messina, Giacomo. - In: PROCEDIA ENGINEERING. - ISSN 1877-7058. - 87:(2014), pp. 232-235. (Intervento presentato al convegno 28th European Conference on Solid-State Transducers tenutosi a Brescia, Italy nel September 7-10, 2014) [10.1016/j.proeng.2014.11.629].
Graphene-based Schottky device detecting NH3 at ppm level in environmental conditions
FAGGIO, GIULIANA;Malara A.;MESSINA, Giacomo
2014-01-01
Abstract
We present a graphene/n-Si Schottky junction for NH3 detection at level of few tens of parts-per-million (ppm). Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Si by drop casting. The Schottky barrier characterization towards NH3 was performed by volt-amperometric measurements in the range 10-200 ppm at bias of -3V. The characterization in the test chamber simulated environmental conditions by Relative Humidity at 50% and temperature at 295 K. Results suggest that the NH3 induces a barrier height modulation with current variations up to 4% for 200 ppm. In environmental conditions, a spontaneous restoring is observed for the device.File | Dimensione | Formato | |
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