In this paper, we report results on a field-effectinduced light modulation at λ = 1.55 μm in a high-index-contrastwaveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H)technology, and it is suitable for monolithic integration in a CMOSIC. The device exploits the free-carrier optical absorption electricallyinduced in the semiconductor core waveguide. The amorphoussilicon waveguiding layer contains several thin dielectricfilms of amorphous silicon carbonitride (α-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.
Electro-optical modulating device based on a CMOS-compatible a-Si:H/a-SiCN multistack multistack waveguide / Rao, Sandro; DELLA CORTE, Francesco Giuseppe; Summonte, Caterina; Suriano, Francesco. - In: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. - ISSN 1077-260X. - 16:1(2010), pp. 173-178. [10.1109/JSTQE.2009.2025604]
Electro-optical modulating device based on a CMOS-compatible a-Si:H/a-SiCN multistack multistack waveguide
Sandro RAO;Francesco DELLA CORTE;
2010-01-01
Abstract
In this paper, we report results on a field-effectinduced light modulation at λ = 1.55 μm in a high-index-contrastwaveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H)technology, and it is suitable for monolithic integration in a CMOSIC. The device exploits the free-carrier optical absorption electricallyinduced in the semiconductor core waveguide. The amorphoussilicon waveguiding layer contains several thin dielectricfilms of amorphous silicon carbonitride (α-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
