In this paper, we report results on a field-effectinduced light modulation at λ = 1.55 μm in a high-index-contrastwaveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H)technology, and it is suitable for monolithic integration in a CMOSIC. The device exploits the free-carrier optical absorption electricallyinduced in the semiconductor core waveguide. The amorphoussilicon waveguiding layer contains several thin dielectricfilms of amorphous silicon carbonitride (α-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.

Electro-optical modulating device based on a CMOS-compatible a-Si:H/a-SiCN multistack multistack waveguide

Sandro RAO;Francesco DELLA CORTE;
2010

Abstract

In this paper, we report results on a field-effectinduced light modulation at λ = 1.55 μm in a high-index-contrastwaveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H)technology, and it is suitable for monolithic integration in a CMOSIC. The device exploits the free-carrier optical absorption electricallyinduced in the semiconductor core waveguide. The amorphoussilicon waveguiding layer contains several thin dielectricfilms of amorphous silicon carbonitride (α-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12318/2155
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