In this paper, a three-layer system for additive patterning on silicon substrates is discussed with reference to the effects of electron beam scattering and in view of 0.2 μm resolution. The results of Monte Carlo simulations are fed into proximity-function and resist development calculations and compared with experimental test patterns. The variables investigated are resist thickness and electron energy.
Electron scattering effects in additive patterning of XRL masks for 0.2 micron resolution / Carcenac, F.; HAGHIRI-GOSNET, A. M.; Messina, G; Paoletti, A.; Rousseaux, F.; Santangelo, S.; Tucciarone, A.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 13:1-4(1991), pp. 197-200. [10.1016/0167-9317(91)90076-P]
Electron scattering effects in additive patterning of XRL masks for 0.2 micron resolution
MESSINA G;S. SANTANGELO;
1991-01-01
Abstract
In this paper, a three-layer system for additive patterning on silicon substrates is discussed with reference to the effects of electron beam scattering and in view of 0.2 μm resolution. The results of Monte Carlo simulations are fed into proximity-function and resist development calculations and compared with experimental test patterns. The variables investigated are resist thickness and electron energy.| File | Dimensione | Formato | |
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