In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built-in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions.
|Titolo:||Study of strain and wetting phenomena in porous silicon by Raman scattering|
|Data di pubblicazione:||2008|
|Appare nelle tipologie:||1.1 Articolo in rivista|