In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built-in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions.

Study of strain and wetting phenomena in porous silicon by Raman scattering / Ferrara, M. A.; Donato, M. G.; Sirleto, L.; Messina, G.; Santangelo, S.; Rendina, I.. - In: JOURNAL OF RAMAN SPECTROSCOPY. - ISSN 0377-0486. - 39:2(2008), pp. 199-204. [10.1002/jrs.1846]

Study of strain and wetting phenomena in porous silicon by Raman scattering

G. MESSINA;S. SANTANGELO;
2008-01-01

Abstract

In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built-in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions.
2008
RAMAN EFFECT, RAMAN SPECTROSCOPY, SCATTERING MEASUREMENTS, RAMAN SCATTERING
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/2572
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