In this work, a Raman and photoluminescence (PL) study of synthetic diamond films grown by hot filament chemical vapor deposition (CVD) on WC-Co is presented. The changes in the Raman spectrum induced by the different pretreatments of the substrate and/or different growth parameters of the films are discussed. In particular, the spectra of the films grown at 740°C substrate temperature, 36 mbar pressure and 1.7% methane content in the CH 4-H2 gas mixture and after different substrate pretreatments show all the features commonly observed in nanocrystalline diamond films, overlapped with a large PL background. A significant level of compressive stress is qualitatively deduced by the shift of the diamond Raman peaks. The different pretreatments of the substrates seem to have no influence on the quality of the diamond films. On the contrary, in samples grown at 700°C substrate temperature, 10 mbar pressure and 1% methane content in the CH4-H2 gas mixture, the contribution of the non-diamond carbon phases to the Raman spectrum substantially decreases, even though the diamond Raman peak remains shifted and broad. Impurities in the films have been identified by means of low-temperature PL measurements. W-and Si-related optical centers have been clearly observed, together with a band at approximately 1.967 eV probably connected to a nitrogen-related defect center.

Raman and photoluminescence study of Hot Filament CVD diamond films grown onto WC-Co substrates / Donato, M. G.; Faggio, G.; Messina, G; Santangelo, S.; Tripodi, P.; Barletta, M.; Rubino, G.. - In: JOURNAL OF RAMAN SPECTROSCOPY. - ISSN 0377-0486. - 39:2(2008), pp. 157-163. [10.1002/jrs.1848]

Raman and photoluminescence study of Hot Filament CVD diamond films grown onto WC-Co substrates

G. FAGGIO;MESSINA G;S. SANTANGELO;
2008-01-01

Abstract

In this work, a Raman and photoluminescence (PL) study of synthetic diamond films grown by hot filament chemical vapor deposition (CVD) on WC-Co is presented. The changes in the Raman spectrum induced by the different pretreatments of the substrate and/or different growth parameters of the films are discussed. In particular, the spectra of the films grown at 740°C substrate temperature, 36 mbar pressure and 1.7% methane content in the CH 4-H2 gas mixture and after different substrate pretreatments show all the features commonly observed in nanocrystalline diamond films, overlapped with a large PL background. A significant level of compressive stress is qualitatively deduced by the shift of the diamond Raman peaks. The different pretreatments of the substrates seem to have no influence on the quality of the diamond films. On the contrary, in samples grown at 700°C substrate temperature, 10 mbar pressure and 1% methane content in the CH4-H2 gas mixture, the contribution of the non-diamond carbon phases to the Raman spectrum substantially decreases, even though the diamond Raman peak remains shifted and broad. Impurities in the films have been identified by means of low-temperature PL measurements. W-and Si-related optical centers have been clearly observed, together with a band at approximately 1.967 eV probably connected to a nitrogen-related defect center.
2008
HOT FILAMENT CVD, DIAMOND, WC CO SUBSTRATES, PHOTOLUMINESCENCE, W SI AND N RELATED OPTICAL CENTERS, RAMAN SPECTROSCOPY
File in questo prodotto:
File Dimensione Formato  
Donato_2008_JRamanSpectrosc_Raman-editor.pdf

non disponibili

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 343.19 kB
Formato Adobe PDF
343.19 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/2573
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 6
social impact