A physical approach to approximation is proposed, representing a valuable aid for the analysis of complex-systems and physical processes and, generally, for the solution of problems involving a lot of variables. The deposition of hydrogenated carbon-nitride (a-CN:H) coatings by reactive-sputtering is here considered as an example for the method presentation. The existence of a clear reliance is demonstrated between growth-conditions and film physical properties, evidenced by Raman characterisation. The deposition parameters playing a relevant role in determining the final issue of the growth process are singled out and an empirical rule for tailoring the coatings characteristics, through specific changes of these variables, is therewith given. The generality of the proposed method is finally emphasised.

A single growth quality indicator for film property tailoring / Santangelo, S.; Messina, G; Fanchini, G.; Tagliaferro, A.. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 13:4-8(2004), pp. 1391-1397. [10.1016/j.diamond.2003.10.037]

A single growth quality indicator for film property tailoring

S. SANTANGELO
;
MESSINA G;
2004-01-01

Abstract

A physical approach to approximation is proposed, representing a valuable aid for the analysis of complex-systems and physical processes and, generally, for the solution of problems involving a lot of variables. The deposition of hydrogenated carbon-nitride (a-CN:H) coatings by reactive-sputtering is here considered as an example for the method presentation. The existence of a clear reliance is demonstrated between growth-conditions and film physical properties, evidenced by Raman characterisation. The deposition parameters playing a relevant role in determining the final issue of the growth process are singled out and an empirical rule for tailoring the coatings characteristics, through specific changes of these variables, is therewith given. The generality of the proposed method is finally emphasised.
2004
RAMAN SPECTROSCOPY, GROWTH, SPUTTERING, NITRIDES, COATING
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/2850
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