The scattering properties of diamond membranes for x-ray masks are discussed through MC simulation. The better intrinsic scattering characteristics of diamond with respect to silicon may result, in actual systems, in only minor advantages, both at low and high e-beam energy. At intermediate energy, we show that, while in case of diamond a 0.15 μm resolution is successfully obtained already at 30 keV, in case of silicon at least 40 keV is required.
Electron scattering of diamond membranes in x-ray mask fabrication / Messina, G; Paoletti, A.; Santangelo, S.; Tucciarone, A.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 21:1-4(1993), pp. 91-94. [10.1016/0167-9317(93)90034-3]
Electron scattering of diamond membranes in x-ray mask fabrication
MESSINA G;S. SANTANGELO;
1993-01-01
Abstract
The scattering properties of diamond membranes for x-ray masks are discussed through MC simulation. The better intrinsic scattering characteristics of diamond with respect to silicon may result, in actual systems, in only minor advantages, both at low and high e-beam energy. At intermediate energy, we show that, while in case of diamond a 0.15 μm resolution is successfully obtained already at 30 keV, in case of silicon at least 40 keV is required.| File | Dimensione | Formato | |
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