An additive process using the three-level resist scheme for X-ray mask fabrication by electron beam lithography is analysed by Monte Carlo simulation of electron scattering. The resist exposure is calculated for specific e-beam test patterns aimed at 0.2μm resolution. The time evolution of the developed resist profiles is simulated by using a string model for dissolution. Relevant process variables such as e-beam energy (25 to 50 keV) and resist thickness are investigated. Simulation results demonstrate that 50 keV is altogether a preferred condition, compared to 25 keV, leading however to different pattern transfer techniques, according to resist thickness. The process modelling is compared with previously reported experimental results. Good qualitative agreement is found, indicating that modelling can be used as an effective aid in the quantitative evaluation of the process.
|Titolo:||“Experimental test of high-resolution process modelling in electron-beam lithography at 25 to 50 keV”|
|Data di pubblicazione:||1993|
|Appare nelle tipologie:||1.1 Articolo in rivista|