A single-layer additive process on silicon substrates is analyzed by Monte Carlo simulation and proximity effect calculations. Variables discussed are e-beam energy (20 to 40 KeV), resist thickness (10000, 5000 Å) and pattern coverage. A major feature of backscattering is the short-range component from the Au base plating, affecting all types of structures. High pattern coverage is a decisive factor hindering 0.3 um resolution in almost all cases. However 0.3 um lines and spaces are generally resolved at 40 KeV.
Titolo: | Simulation of 64 megabit lithography in XRL masks obtained by single-layerprocess on Si substrates |
Autori: | |
Data di pubblicazione: | 1990 |
Rivista: | |
Handle: | http://hdl.handle.net/20.500.12318/4272 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.