A single-layer additive process on silicon substrates is analyzed by Monte Carlo simulation and proximity effect calculations. Variables discussed are e-beam energy (20 to 40 KeV), resist thickness (10000, 5000 Å) and pattern coverage. A major feature of backscattering is the short-range component from the Au base plating, affecting all types of structures. High pattern coverage is a decisive factor hindering 0.3 um resolution in almost all cases. However 0.3 um lines and spaces are generally resolved at 40 KeV.
Simulation of 64 megabit lithography in XRL masks obtained by single-layerprocess on Si substrates / Messina, G; Paoletti, A.; Santangelo, S.; Tucciarone, A.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 11:1-4(1990), pp. 625-628. [10.1016/0167-9317(90)90184-U]
Simulation of 64 megabit lithography in XRL masks obtained by single-layerprocess on Si substrates
MESSINA G;S. SANTANGELO;
1990-01-01
Abstract
A single-layer additive process on silicon substrates is analyzed by Monte Carlo simulation and proximity effect calculations. Variables discussed are e-beam energy (20 to 40 KeV), resist thickness (10000, 5000 Å) and pattern coverage. A major feature of backscattering is the short-range component from the Au base plating, affecting all types of structures. High pattern coverage is a decisive factor hindering 0.3 um resolution in almost all cases. However 0.3 um lines and spaces are generally resolved at 40 KeV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
