A single-layer additive process on silicon substrates is analyzed by Monte Carlo simulation and proximity effect calculations. Variables discussed are e-beam energy (20 to 40 KeV), resist thickness (10000, 5000 Å) and pattern coverage. A major feature of backscattering is the short-range component from the Au base plating, affecting all types of structures. High pattern coverage is a decisive factor hindering 0.3 um resolution in almost all cases. However 0.3 um lines and spaces are generally resolved at 40 KeV.
|Titolo:||Simulation of 64 megabit lithography in XRL masks obtained by single-layerprocess on Si substrates|
|Data di pubblicazione:||1990|
|Appare nelle tipologie:||1.1 Articolo in rivista|