A theoretical investigation of electron-scattering properties of diamond substrates is presented. A complete simulation combining Monte Carlo calculation of energy deposition and a resist development model is carried out for evaluating the suitability of diamond as a membrane for high-resolution X-ray masks, with respect to silicon. Simulation results concerning the single-layer resist process for X-ray mask fabrication demonstrate that, in the limits of low and high e-beam energy, there is no significant difference in using silicon or diamond. In contrast, at intermediate energy, the choice of the membrane may be critical in the prospect of attaining high resolutions.

Simulation of electron-scattering properties of diamond membranes in X-ray mask fabrication / Messina, G; Santangelo, S.; Paoletti, A.; Tucciarone, A.. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 3:4-6(1994), pp. 942-946. [10.1016/0925-9635(94)90305-0]

Simulation of electron-scattering properties of diamond membranes in X-ray mask fabrication

MESSINA G;S. SANTANGELO;
1994-01-01

Abstract

A theoretical investigation of electron-scattering properties of diamond substrates is presented. A complete simulation combining Monte Carlo calculation of energy deposition and a resist development model is carried out for evaluating the suitability of diamond as a membrane for high-resolution X-ray masks, with respect to silicon. Simulation results concerning the single-layer resist process for X-ray mask fabrication demonstrate that, in the limits of low and high e-beam energy, there is no significant difference in using silicon or diamond. In contrast, at intermediate energy, the choice of the membrane may be critical in the prospect of attaining high resolutions.
1994
ELECTRON SCATTERING, ELECTRON BEAM LITHOGRAPHY, MONTE CARLO SIMULATION, MASK FABRICATION
File in questo prodotto:
File Dimensione Formato  
Messina_1994_DiamondRelMater_Simulation-editor.pdf

non disponibili

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 403.35 kB
Formato Adobe PDF
403.35 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/4569
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact