This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.

Light exposure effects on the DC kink of AlGaN/GaN HEMTs / Caddemi, A.; Cardillo, E.; Patane, S.; Triolo, C.. - In: ELECTRONICS. - ISSN 2079-9292. - 8:6(2019), pp. 698-706. [10.3390/electronics8060698]

Light exposure effects on the DC kink of AlGaN/GaN HEMTs

Cardillo E.;Triolo C.
2019-01-01

Abstract

This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.
2019
GaN HEMT; optical behavior; light exposure; laser; kink effect
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/47481
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