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EnglishA theoretical investigation is presented of electron scattering effects in tungsten/carbon mask fabrication process for x-ray projection lithography. A Monte Carlo simulation is carried out and results are utilised to evaluate proximity effects. Electron-beam energy (20 to 100 keV) and mask substrate material (silicon and diamond) are process variables considered. The results demonstrate that, in the presence of a bulk substrate, higher-contrast patterns can be obtained, at intermediate energies, by using diamond rather than silicon. Finally, in order to fully benefit from the more favourable diamond scattering properties, a diamond membrane is proposed as mask-supporting layer, allowing to further improve lithographic resolution at higher e-beam energies.
| Titolo: | Tungsten/carbon masks in x-ray projection lithography |
| Autori: | |
| Data di pubblicazione: | 1994 |
| Rivista: | |
| Handle: | http://hdl.handle.net/20.500.12318/507 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/20.500.12318/507
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