A theoretical investigation is presented of electron scattering effects in tungsten/carbon mask fabrication process for x-ray projection lithography. A Monte Carlo simulation is carried out and results are utilised to evaluate proximity effects. Electron-beam energy (20 to 100 keV) and mask substrate material (silicon and diamond) are process variables considered. The results demonstrate that, in the presence of a bulk substrate, higher-contrast patterns can be obtained, at intermediate energies, by using diamond rather than silicon. Finally, in order to fully benefit from the more favourable diamond scattering properties, a diamond membrane is proposed as mask-supporting layer, allowing to further improve lithographic resolution at higher e-beam energies.

Tungsten/carbon masks in x-ray projection lithography / A., Paoletti; Santangelo, Saveria; A., Tucciarone; Messina, Giacomo. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 23:1-4(1994), pp. 421-425. [10.1016/0167-9317(94)90187-2]

Tungsten/carbon masks in x-ray projection lithography

SANTANGELO, Saveria;MESSINA, Giacomo
1994-01-01

Abstract

A theoretical investigation is presented of electron scattering effects in tungsten/carbon mask fabrication process for x-ray projection lithography. A Monte Carlo simulation is carried out and results are utilised to evaluate proximity effects. Electron-beam energy (20 to 100 keV) and mask substrate material (silicon and diamond) are process variables considered. The results demonstrate that, in the presence of a bulk substrate, higher-contrast patterns can be obtained, at intermediate energies, by using diamond rather than silicon. Finally, in order to fully benefit from the more favourable diamond scattering properties, a diamond membrane is proposed as mask-supporting layer, allowing to further improve lithographic resolution at higher e-beam energies.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/507
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