A theoretical investigation is presented of electron scattering effects in tungsten/carbon mask fabrication process for x-ray projection lithography. A Monte Carlo simulation is carried out and results are utilised to evaluate proximity effects. Electron-beam energy (20 to 100 keV) and mask substrate material (silicon and diamond) are process variables considered. The results demonstrate that, in the presence of a bulk substrate, higher-contrast patterns can be obtained, at intermediate energies, by using diamond rather than silicon. Finally, in order to fully benefit from the more favourable diamond scattering properties, a diamond membrane is proposed as mask-supporting layer, allowing to further improve lithographic resolution at higher e-beam energies.
Tungsten/carbon masks in x-ray projection lithography / A., P., Santangelo, S., A., T., Messina, G.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 23:1-4(1994), pp. 421-425. [10.1016/0167-9317(94)90187-2]
Tungsten/carbon masks in x-ray projection lithography
SANTANGELO, Saveria;MESSINA, Giacomo
1994-01-01
Abstract
A theoretical investigation is presented of electron scattering effects in tungsten/carbon mask fabrication process for x-ray projection lithography. A Monte Carlo simulation is carried out and results are utilised to evaluate proximity effects. Electron-beam energy (20 to 100 keV) and mask substrate material (silicon and diamond) are process variables considered. The results demonstrate that, in the presence of a bulk substrate, higher-contrast patterns can be obtained, at intermediate energies, by using diamond rather than silicon. Finally, in order to fully benefit from the more favourable diamond scattering properties, a diamond membrane is proposed as mask-supporting layer, allowing to further improve lithographic resolution at higher e-beam energies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
