Electro optical absorption in hydrogenated amorphous silicon (α-Si:H) - amorphous silicon carbonitride (α-SiCxNγ) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 μm through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
Electro-optically induced absorption in a-Si:H/a-SiCN waveguiding multistacks / DELLA CORTE, F. G.; Rao, S.; Nigro, M. A.; Summonte, C.; Suriano, F.; DELLA CORTE, Francesco Giuseppe. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 16:(2008), pp. 7540-7550. [10.1364/OE.16.007540]
Electro-optically induced absorption in a-Si:H/a-SiCN waveguiding multistacks
S. RAO;DELLA CORTE, Francesco Giuseppe
2008-01-01
Abstract
Electro optical absorption in hydrogenated amorphous silicon (α-Si:H) - amorphous silicon carbonitride (α-SiCxNγ) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 μm through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
