Electro optical absorption in hydrogenated amorphous silicon (α-Si:H) - amorphous silicon carbonitride (α-SiCxNγ) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 μm through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
|Titolo:||Electro-optically induced absorption in a-Si:H/a-SiCN waveguiding multistacks|
|Data di pubblicazione:||2008|
|Appare nelle tipologie:||1.1 Articolo in rivista|