Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.

Investigation of porous silicon wetting by Raman scattering / Ferrara, M. A.; Donato, M. G.; Sirleto, L.; Messina, G; Santangelo, S.; Rendina, I.. - In: SPECTROSCOPY LETTERS. - ISSN 0038-7010. - 41:4(2008), pp. 179-183. [10.1080/00387010802132391]

Investigation of porous silicon wetting by Raman scattering

MESSINA G;S. SANTANGELO;
2008-01-01

Abstract

Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.
2008
POROUS SILICON, RAMAN SCATTERING, WETTING PHENOMENA
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/5465
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