Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.
Investigation of porous silicon wetting by Raman scattering / Ferrara, M. A.; Donato, M. G.; Sirleto, L.; Messina, G; Santangelo, S.; Rendina, I.. - In: SPECTROSCOPY LETTERS. - ISSN 0038-7010. - 41:4(2008), pp. 179-183. [10.1080/00387010802132391]
Investigation of porous silicon wetting by Raman scattering
MESSINA G;S. SANTANGELO;
2008-01-01
Abstract
Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.File | Dimensione | Formato | |
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