Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.
Investigation of porous silicon wetting by Raman scattering / Ferrara, M. A.; Donato, M. G.; Sirleto, L.; Messina, G; Santangelo, S.; Rendina, I.. - In: SPECTROSCOPY LETTERS. - ISSN 0038-7010. - 41:4(2008), pp. 179-183. [10.1080/00387010802132391]
Investigation of porous silicon wetting by Raman scattering
MESSINA G;S. SANTANGELO;
2008-01-01
Abstract
Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.| File | Dimensione | Formato | |
|---|---|---|---|
|
Ferrara_2008_SpectrLett_Investigation-editor.pdf
non disponibili
Descrizione: Articolo principale
Tipologia:
Versione Editoriale (PDF)
Licenza:
Tutti i diritti riservati (All rights reserved)
Dimensione
170.16 kB
Formato
Adobe PDF
|
170.16 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
