X-ray masks are fabricated utilizing a single-resist layer process and boron nitride (BN) substrate. Final absorber structures are obtained by Au electroplating after e-beam patterning at 20 and 30 keV electron energy. Great improvement is observed, going from 20 to 30 keV, and high resolution structures were written down to 0.2 um. The results are analyzed in terms of Monte Carlo simulation and the proximity function. At 20 keV, a remarkable contribution to backscattering is found from the 200 Å Au plating base, which drops dramatically at 30 keV.
X-ray mask making by EBL and Monte Carlo analysis of a single-resist layerprocess on low-Z membrane / M., Gentili; A., Lucchesini; P., Lugli; A., Paoletti; Santangelo, Saveria; A., Tucciarone; G., Petrocco; Messina, Giacomo. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 9:1-4(1989), pp. 147-150. [10.1016/0167-9317(89)90034-8]
X-ray mask making by EBL and Monte Carlo analysis of a single-resist layerprocess on low-Z membrane
SANTANGELO, Saveria;MESSINA, Giacomo
1989-01-01
Abstract
X-ray masks are fabricated utilizing a single-resist layer process and boron nitride (BN) substrate. Final absorber structures are obtained by Au electroplating after e-beam patterning at 20 and 30 keV electron energy. Great improvement is observed, going from 20 to 30 keV, and high resolution structures were written down to 0.2 um. The results are analyzed in terms of Monte Carlo simulation and the proximity function. At 20 keV, a remarkable contribution to backscattering is found from the 200 Å Au plating base, which drops dramatically at 30 keV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
