This brief presents an energy-efficient level shifter (LS) able to convert extremely low level input voltages to the nominal voltage domain. To obtain low static power consumption, the proposed architecture is based on the single-stage differential-cascode-voltage-switch scheme. Moreover, it exploits self-adapting pull-up networks to increase the switching speed and to reduce the dynamic energy consumption, while a split input inverting buffer is used as the output stage to further improve energy efficiency. When implemented in a commercial 180-nm CMOS process, the proposed design can up-convert from the deep subthreshold regime (sub-100 mV) to the nominal supply voltage (1.8 V). For the target voltage level conversion from 0.4 to 1.8 V, our LS exhibits an average propagation delay of 31.7 ns, an average static power of less than 60 pW, and an energy per transition of 173 fJ, as experimentally measured across the test chips.

An Ultralow-Voltage Energy-Efficient Level Shifter / Lanuzza, Marco; Crupi, Felice; Rao, Sandro; De Rose, Raffaele; Strangio, Sebastiano; Iannaccone, Giuseppe. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. II, EXPRESS BRIEFS. - ISSN 1549-7747. - 64:1(2017), pp. 61-65. [10.1109/TCSII.2016.2538724]

An Ultralow-Voltage Energy-Efficient Level Shifter

Rao, Sandro
;
2017-01-01

Abstract

This brief presents an energy-efficient level shifter (LS) able to convert extremely low level input voltages to the nominal voltage domain. To obtain low static power consumption, the proposed architecture is based on the single-stage differential-cascode-voltage-switch scheme. Moreover, it exploits self-adapting pull-up networks to increase the switching speed and to reduce the dynamic energy consumption, while a split input inverting buffer is used as the output stage to further improve energy efficiency. When implemented in a commercial 180-nm CMOS process, the proposed design can up-convert from the deep subthreshold regime (sub-100 mV) to the nominal supply voltage (1.8 V). For the target voltage level conversion from 0.4 to 1.8 V, our LS exhibits an average propagation delay of 31.7 ns, an average static power of less than 60 pW, and an energy per transition of 173 fJ, as experimentally measured across the test chips.
2017
Threshold Circuits, SOI (Semiconductor), Voltage Scaling
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/61901
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