An analysis of electron scattering is presented, into short and long range components, and a comparison is made with the conventional decomposition into forward and back scattering. A generalized ν is defined in place of the usual backscattering coefficient. Results are shown, in terms of Monte Carlo simulation, relative to some cases of practical interest. In particular, a quite general system is discussed for master-mask fabrication. The limits of the conventional approach are demonstrated.
The generalized backscattering coefficient: a novel parameter in electron scattering processes / Messina, G; Paoletti, A.; Santangelo, S.; Tucciarone, A.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 17:1-4(1992), pp. 385-388. [10.1016/0167-9317(92)90078-6]
The generalized backscattering coefficient: a novel parameter in electron scattering processes
MESSINA G;S. SANTANGELO;
1992-01-01
Abstract
An analysis of electron scattering is presented, into short and long range components, and a comparison is made with the conventional decomposition into forward and back scattering. A generalized ν is defined in place of the usual backscattering coefficient. Results are shown, in terms of Monte Carlo simulation, relative to some cases of practical interest. In particular, a quite general system is discussed for master-mask fabrication. The limits of the conventional approach are demonstrated.| File | Dimensione | Formato | |
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