An analysis of electron scattering is presented, into short and long range components, and a comparison is made with the conventional decomposition into forward and back scattering. A generalized ν is defined in place of the usual backscattering coefficient. Results are shown, in terms of Monte Carlo simulation, relative to some cases of practical interest. In particular, a quite general system is discussed for master-mask fabrication. The limits of the conventional approach are demonstrated.
The generalized backscattering coefficient: a novel parameter in electron scattering processes
MESSINA G;S. SANTANGELO;
1992
Abstract
An analysis of electron scattering is presented, into short and long range components, and a comparison is made with the conventional decomposition into forward and back scattering. A generalized ν is defined in place of the usual backscattering coefficient. Results are shown, in terms of Monte Carlo simulation, relative to some cases of practical interest. In particular, a quite general system is discussed for master-mask fabrication. The limits of the conventional approach are demonstrated.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Messina_1992_MicroelectronEng_The generalised-editor.pdf
non disponibili
Descrizione: Articolo principale
Tipologia:
Versione Editoriale (PDF)
Licenza:
Tutti i diritti riservati (All rights reserved)
Dimensione
329.47 kB
Formato
Adobe PDF
|
329.47 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
