A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimated the performances in terms of optical losses, voltage-length product and bandwidth at λ=1550 nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrated a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ = 19 V×cm allowing to design shorter devices with respect to p-i-n structure.

Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-n and p-i-p configurations / Rao, S.; Coppola, G.; Summonte, C.; Gioffrè, M. A.; Della Corte, F. G.; DELLA CORTE, Francesco Giuseppe. - In: OPTICAL ENGINEERING. - ISSN 0091-3286. - 52:8(2013), pp. 087110-1-087110-5. [10.1117/1.OE.52.8.087110]

Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-n and p-i-p configurations

S. Rao;DELLA CORTE, Francesco Giuseppe
2013-01-01

Abstract

A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimated the performances in terms of optical losses, voltage-length product and bandwidth at λ=1550 nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrated a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ = 19 V×cm allowing to design shorter devices with respect to p-i-n structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/6390
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