A set of diamond films was grown by microwave plasma enhanced chemical vapour deposition using a CO2-CH4 gas mixture. Film morphology, preferential orientation and crystal quality were systematically changed by varying the CH4 concentration and substrate temperature in the ranges 47-52% and 750-850 °C, respectively. The resulting films were characterised by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL). The crystalline quality of the films, as assessed by Raman spectroscopy, increases at lower substrate temperatures (Ts=750 °C) and when moving from (110) towards (100) texturing. Independently of the substrate temperature, a strong decrease of the band-A cathodoluminescence at 435 nm is found as the film preferential orientation goes from (110) to (100). A clear correlation between the width of the diamond Raman line and the band-A emission is observed, giving insight into the nature of this band. In particular, this result is consistent with the attribution of band-A CL to the presence of dislocations.

Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films / Faggio, G.; Marinelli, M.; Messina, G; Milani, E.; Paoletti, A.; Santangelo, S.; Tucciarone, A.; VERONA RINATI, G.. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 8:2-5(1999), pp. 640-644. [10.1016/S0925-9635(98)00273-8]

Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films

G. FAGGIO;MESSINA G;S. SANTANGELO;
1999-01-01

Abstract

A set of diamond films was grown by microwave plasma enhanced chemical vapour deposition using a CO2-CH4 gas mixture. Film morphology, preferential orientation and crystal quality were systematically changed by varying the CH4 concentration and substrate temperature in the ranges 47-52% and 750-850 °C, respectively. The resulting films were characterised by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL). The crystalline quality of the films, as assessed by Raman spectroscopy, increases at lower substrate temperatures (Ts=750 °C) and when moving from (110) towards (100) texturing. Independently of the substrate temperature, a strong decrease of the band-A cathodoluminescence at 435 nm is found as the film preferential orientation goes from (110) to (100). A clear correlation between the width of the diamond Raman line and the band-A emission is observed, giving insight into the nature of this band. In particular, this result is consistent with the attribution of band-A CL to the presence of dislocations.
1999
RAMAN SPECTROSCOPY, CATHODOLUMINESCENCE, TEXTURE, CVD DIAMOND
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/901
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