| Nome |
# |
|
Design and simulation of a high efficiency CdS/CdTe solar cell, file e2047589-6bcf-7e24-e053-6605fe0afb29
|
176
|
|
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications, file e2047588-1219-7e24-e053-6605fe0afb29
|
122
|
|
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications, file e2047588-118f-7e24-e053-6605fe0afb29
|
119
|
|
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes, file e2047588-1393-7e24-e053-6605fe0afb29
|
114
|
|
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs, file e2047588-1182-7e24-e053-6605fe0afb29
|
86
|
|
Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector, file e2047588-1760-7e24-e053-6605fe0afb29
|
73
|
|
Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating, file e2047588-12b5-7e24-e053-6605fe0afb29
|
64
|
|
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET, file e2047588-1425-7e24-e053-6605fe0afb29
|
64
|
|
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions, file e2047589-9f28-7e24-e053-6605fe0afb29
|
59
|
|
Theoretical design and performance of InxGa1-xN single junction solar cell, file e2047588-1500-7e24-e053-6605fe0afb29
|
54
|
|
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047588-1391-7e24-e053-6605fe0afb29
|
41
|
|
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047588-1367-7e24-e053-6605fe0afb29
|
38
|
|
An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature, file e2047589-9f2f-7e24-e053-6605fe0afb29
|
38
|
|
Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode, file e2047589-9a3a-7e24-e053-6605fe0afb29
|
25
|
|
Acoustic simulation for performance evaluation of ultrasonic ranging systems, file e2047588-f1b8-7e24-e053-6605fe0afb29
|
20
|
|
Ranging with Frequency Dependent Ultrasound Air Attenuation, file e2047589-0489-7e24-e053-6605fe0afb29
|
20
|
|
Simulation study for the current matching optimization in In0.48Ga0.52N/In0.74 Ga0.26N dual junction solar cells, file e2047588-0f48-7e24-e053-6605fe0afb29
|
19
|
|
Performance analysis of a Pt/n-GaN Schottky barrier UV detector, file e2047588-12e0-7e24-e053-6605fe0afb29
|
19
|
|
Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode, file e2047588-0f20-7e24-e053-6605fe0afb29
|
18
|
|
Improved InxGa1_xP/GaAs /Ge tandem solar cell using light trapping engineering and multi-objective optimization approach, file e2047589-b628-7e24-e053-6605fe0afb29
|
17
|
|
Analysis of the electrical characteristics of Mo/4H-SiC Schottky barrier diodes for temperature sensing applications, file e2047589-694a-7e24-e053-6605fe0afb29
|
16
|
|
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047588-130e-7e24-e053-6605fe0afb29
|
11
|
|
Analysis of the forward I–V characteristics of Al-implanted 4H-SiC p-i-n diodes with modeling of recombination and trapping effects due to intrinsic and doping-induced defect states, file e2047588-14cb-7e24-e053-6605fe0afb29
|
10
|
|
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications, file e2047589-2bea-7e24-e053-6605fe0afb29
|
9
|
|
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell, file e2047589-9f2d-7e24-e053-6605fe0afb29
|
8
|
|
Analytical modeling of dual-junction tandem solar cells based on an InGaP/GaAs heterojunction stacked on a Ge substrate, file e2047588-0fdf-7e24-e053-6605fe0afb29
|
7
|
|
Analysis of I–V–T Characteristics of Au/n-InP Schottky barrier diodes with modeling of nanometer-sized patches at low temperature, file e2047588-192d-7e24-e053-6605fe0afb29
|
5
|
|
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell, file e2047589-9f2a-7e24-e053-6605fe0afb29
|
5
|
|
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET, file e2047587-4360-7e24-e053-6605fe0afb29
|
4
|
|
PyAMS: A New Software for Modeling Analog Elements and Circuit Simulations, file e2047588-fb46-7e24-e053-6605fe0afb29
|
4
|
|
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes, file e2047587-40db-7e24-e053-6605fe0afb29
|
3
|
|
Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode, file e2047589-7f27-7e24-e053-6605fe0afb29
|
3
|
|
Improving graphene/4H-SiC/graphene MSM UV photodetector sensitivity using interdigitated electrodes formalism and embedded gold plasmonic nanoparticles, file e2047589-8e1d-7e24-e053-6605fe0afb29
|
3
|
|
Performance Evaluation of Silicon and GaN Switches for a Small Wireless Power Transfer System, file 5a127993-f8bc-498f-a8c7-bec0a9074caa
|
2
|
|
Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors, file d5476a1a-8b90-4ea7-bf3a-e1ad53a0df20
|
2
|
|
Performance analysis of a Pt/n-GaN Schottky barrier UV detector, file e2047587-3d44-7e24-e053-6605fe0afb29
|
2
|
|
Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector, file e2047587-3d45-7e24-e053-6605fe0afb29
|
2
|
|
Theoretical design and performance of InxGa1-xN single junction solar cell, file e2047587-3e5d-7e24-e053-6605fe0afb29
|
2
|
|
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes, file e2047587-40d6-7e24-e053-6605fe0afb29
|
2
|
|
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047587-434a-7e24-e053-6605fe0afb29
|
2
|
|
Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode, file e2047587-43ce-7e24-e053-6605fe0afb29
|
2
|
|
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications, file e2047587-480b-7e24-e053-6605fe0afb29
|
2
|
|
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes, file e2047587-62b5-7e24-e053-6605fe0afb29
|
2
|
|
An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature, file e2047588-3837-7e24-e053-6605fe0afb29
|
2
|
|
Study and assessment of defect and trap effects on the current capabilities of a 4h-sic-based power mosfet, file e2047588-7cc3-7e24-e053-6605fe0afb29
|
2
|
|
Power LED junction temperature readout circuit based on an off-the-shelf LED driver, file e2047589-7054-7e24-e053-6605fe0afb29
|
2
|
|
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions, file e2047589-b6fb-7e24-e053-6605fe0afb29
|
2
|
|
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs, file e2047587-4068-7e24-e053-6605fe0afb29
|
1
|
|
Simulation study for the current matching optimization in In0.48Ga0.52N/In0.74 Ga0.26N dual junction solar cells, file e2047587-40c6-7e24-e053-6605fe0afb29
|
1
|
|
Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating, file e2047587-40d1-7e24-e053-6605fe0afb29
|
1
|
|
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications, file e2047587-441c-7e24-e053-6605fe0afb29
|
1
|
|
Analytical modeling of dual-junction tandem solar cells based on an InGaP/GaAs heterojunction stacked on a Ge substrate, file e2047587-441f-7e24-e053-6605fe0afb29
|
1
|
|
Analysis of the forward I–V characteristics of Al-implanted 4H-SiC p-i-n diodes with modeling of recombination and trapping effects due to intrinsic and doping-induced defect states, file e2047587-4422-7e24-e053-6605fe0afb29
|
1
|
|
Analysis of I–V–T Characteristics of Au/n-InP Schottky barrier diodes with modeling of nanometer-sized patches at low temperature, file e2047587-4424-7e24-e053-6605fe0afb29
|
1
|
|
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell, file e2047589-7897-7e24-e053-6605fe0afb29
|
1
|
|
Improved InxGa1_xP/GaAs /Ge tandem solar cell using light trapping engineering and multi-objective optimization approach, file e2047589-7f25-7e24-e053-6605fe0afb29
|
1
|
|
Analysis of the electrical characteristics of Mo/4H-SiC Schottky barrier diodes for temperature sensing applications, file e2047589-7f29-7e24-e053-6605fe0afb29
|
1
|
|
Design and simulation of a high efficiency CdS/CdTe solar cell, file e2047589-7f2b-7e24-e053-6605fe0afb29
|
1
|
|
An efficient 4h-sic photodiode for uv sensing applications, file e2047589-8a56-7e24-e053-6605fe0afb29
|
1
|
|
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell, file e2047589-ba54-7e24-e053-6605fe0afb29
|
1
|
| Totale |
1.315 |