IRIS
PEZZIMENTI, Fortunato
 Distribuzione geografica
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Continente #
NA - Nord America 2.531
AS - Asia 1.335
EU - Europa 747
SA - Sud America 580
AF - Africa 62
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 2
Totale 5.267
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Nazione #
US - Stati Uniti d'America 2.462
SG - Singapore 605
BR - Brasile 486
IT - Italia 264
VN - Vietnam 187
HK - Hong Kong 185
CN - Cina 162
DE - Germania 110
GB - Regno Unito 86
FI - Finlandia 82
SE - Svezia 49
CA - Canada 37
IN - India 36
AR - Argentina 34
TR - Turchia 26
ZA - Sudafrica 26
PL - Polonia 23
MX - Messico 22
BD - Bangladesh 21
EC - Ecuador 21
ID - Indonesia 18
ES - Italia 17
BE - Belgio 16
DZ - Algeria 14
IQ - Iraq 14
JP - Giappone 13
UA - Ucraina 13
UZ - Uzbekistan 13
FR - Francia 11
LT - Lituania 11
IR - Iran 10
PY - Paraguay 10
CO - Colombia 9
NL - Olanda 9
RU - Federazione Russa 9
AU - Australia 8
MA - Marocco 8
RO - Romania 7
AE - Emirati Arabi Uniti 6
CL - Cile 6
KR - Corea 6
PK - Pakistan 6
SA - Arabia Saudita 6
AT - Austria 5
CZ - Repubblica Ceca 5
EE - Estonia 5
PE - Perù 5
IE - Irlanda 4
IL - Israele 4
VE - Venezuela 4
AL - Albania 3
BG - Bulgaria 3
CH - Svizzera 3
JO - Giordania 3
KE - Kenya 3
PH - Filippine 3
UY - Uruguay 3
BO - Bolivia 2
BW - Botswana 2
DK - Danimarca 2
ET - Etiopia 2
GD - Grenada 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
OM - Oman 2
SN - Senegal 2
SV - El Salvador 2
TJ - Tagikistan 2
AM - Armenia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BZ - Belize 1
CV - Capo Verde 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EU - Europa 1
GR - Grecia 1
HU - Ungheria 1
IS - Islanda 1
JM - Giamaica 1
LV - Lettonia 1
MD - Moldavia 1
MG - Madagascar 1
NE - Niger 1
NG - Nigeria 1
NP - Nepal 1
PA - Panama 1
PT - Portogallo 1
RS - Serbia 1
SI - Slovenia 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 5.267
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Città #
Dallas 387
Singapore 327
Chandler 305
Hong Kong 182
Ashburn 150
Santa Clara 131
Boardman 124
San Mateo 108
New York 91
Helsinki 82
Lawrence 81
Princeton 81
Wilmington 75
Shanghai 74
Ho Chi Minh City 68
Brasília 66
Los Angeles 51
Ann Arbor 49
Beijing 48
Hanoi 45
Des Moines 40
São Paulo 36
Pescara 35
Cosenza 28
Southend 24
Reggio Calabria 23
Warsaw 21
Denver 20
Montreal 18
Council Bluffs 17
Johannesburg 17
Rio de Janeiro 17
The Dalles 17
Brussels 16
Columbus 16
Chicago 15
Chennai 14
Belo Horizonte 13
Curitiba 13
Falls Church 13
San Francisco 13
Stockholm 13
Tokyo 13
Houston 12
Seattle 12
Tashkent 12
Toronto 12
Brooklyn 11
Phoenix 11
Ankara 10
Atlanta 10
London 10
Manchester 10
Poplar 10
Quito 10
Haiphong 9
Amsterdam 8
Boston 8
Orem 8
Bari 7
Fortaleza 7
Frankfurt am Main 7
Mexico City 7
Norwalk 7
Asunción 6
Baghdad 6
Biên Hòa 6
Cedar Knolls 6
Edinburgh 6
Mumbai 6
Porto Alegre 6
Redmond 6
Washington 6
Bonndorf 5
Dhaka 5
Guayaquil 5
Jakarta 5
Madrid 5
Manaus 5
Prague 5
Pune 5
Rome 5
Salvador 5
San Jose 5
Santo André 5
Tallinn 5
Zanjan 5
Andover 4
Caxias do Sul 4
City of London 4
Cotia 4
Da Nang 4
Goiânia 4
Ha Long 4
Melbourne 4
Munich 4
Ninh Bình 4
Pelotas 4
Querétaro 4
Redwood City 4
Totale 3.351
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Nome #
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes 115
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes 110
Performance analysis of a Pt/n-GaN Schottky barrier UV detector 109
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications 101
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes 96
Analysis of the electrical characteristics of Mo/4H-SiC Schottky barrier diodes for temperature sensing applications 94
A microchip integrated temperature sensor with RF communication channel and on-chip antenna 93
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 92
Analysis of the forward I–V characteristics of Al-implanted 4H-SiC p-i-n diodes with modeling of recombination and trapping effects due to intrinsic and doping-induced defect states 91
An efficient 4h-sic photodiode for uv sensing applications 91
Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes 86
Analytical modeling of dual-junction tandem solar cells based on an InGaP/GaAs heterojunction stacked on a Ge substrate 86
Acoustic simulation for performance evaluation of ultrasonic ranging systems 86
Use of 4H-SiC-based Diodes as Temperature Sensors 83
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions 81
Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector 79
An Enhanced Conversion Efficiency of Metal Insulator Semiconductor Solar Cells by Using Different High-K Dielectrics 78
Analysis of the current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for high performance temperature sensors 76
Power LED junction temperature readout circuit based on an off-the-shelf LED driver 74
Ranging with Frequency Dependent Ultrasound Air Attenuation 73
Considerations on External Heat Transfer in Saturated Bipolar Junction Transistors 72
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET 71
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 71
Analysis of I–V–T Characteristics of Au/n-InP Schottky barrier diodes with modeling of nanometer-sized patches at low temperature 70
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications 70
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs 67
Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET 67
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications 67
Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode 66
Improved InxGa1_xP/GaAs /Ge tandem solar cell using light trapping engineering and multi-objective optimization approach 64
Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector 64
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 63
PyAMS: A New Software for Modeling Analog Elements and Circuit Simulations 63
Design and simulation of a high efficiency CdS/CdTe solar cell 62
Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance 62
Performance Evaluation of Silicon and GaN Switches for a Small Wireless Power Transfer System 62
Analytical model for the light trapping effect on ZnO:Al/c-Si/SiGe/c-Si solar cells with an optimized design 61
An a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency 61
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell 61
Performance prediction of AlGaAs/GaAs betavoltaic cells irradiated by nickel-63 radioisotope 61
Theoretical design and performance of InxGa1-xN single junction solar cell 60
The Role of High-K Dielectrics in Improving the Performance of Metal-Insulator-Semiconductor Solar Cells 60
Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode 59
Design and numerical characterization of a low voltage power MOSFET in 4H-SiC for photovoltaic applications 58
Simulation study for the current matching optimization in In0.48Ga0.52N/In0.74 Ga0.26N dual junction solar cells 58
Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency 57
An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature 57
Steady-state analysis of a normally-off 4H-SiC trench Bipolar-Mode FET 57
Simulation study of an optimized current matching for In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N triple-junction solar cells 57
Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes 56
Fast and energy-efficient Manchester carry-bypass adders 56
Study and assessment of defect and trap effects on the current capabilities of a 4h-sic-based power mosfet 56
Design and simulation of an a-Si:H/GaAs Heterojunction Bipolar Transistor 55
Design considerations on 4H-SiC-based p–n junction betavoltaic cells 55
Simulation analysis of a 4H-SiC BMFET power transistor with normally-off characteristics 54
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell 54
Numerical simulation of an effective AlGaN-based ultraviolet photodetector 54
Interface trap effects in the design of a 4H-SiC MOSFET for low voltage applications 53
Simulation study of an a-Si:H/GaAs HBT with improved DC and high frequency characteristics 53
Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors 52
Study of the DC characteristics of SiGe heterojunction bipolar transistors with an a-Si:H emitter 52
Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC 52
Electrical characterization of the forward current voltage of Al implanted 4H-SiC pin diodes 51
Possible efficiency boosting of tandem solar cell by using single antireflection coating and BSF layer 51
Ultrasonic Ranging using Frequency Selective Attenuation 51
Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating 50
Numerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics 50
Simulation study and design considerations for an 4H-SiC aluminium implanted p-i-n diode 49
Design of a-Si:H/GaAs Heterojunction Bipolar Transistors with improved DC and AC characteristics 49
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour 48
Modeling and optimization of CZTS kesterite solar cells using TiO2 as efficient electron transport layer 48
Combined Machine Learning techniques for analyzing the back contact influence on the stability of perovskite-based solar cells 47
Study of a novel low breakdown voltage 4H-SiC MOSFET for PV module-level applications 46
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as high power transistor 44
Modeling of a compressively strained quantum well laser based on In xGa1−xSb/GaSb and emitting at 2 μm 44
Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics 43
Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor 42
Modeling of the steady state and switching characteristics of a normally-off 4H-SiC trench bipolar-mode FET 37
Numerical simulations of Al implanted 4H-SiC diodes modeling an explicit carrier trap effect due to the non-substitutional Al doping concentration 35
Design and modeling of a novel 4H-SiC normally-off BMFET transistor for power applications 35
Modeling and simulation of a high power InGaP/GaAs heterojunction alphavoltaic battery irradiated by americium-241 34
Design and simulation of an a-Si:H/GaAs HBT with improved DC and high frequency characteristics 33
Improving graphene/4H-SiC/graphene MSM UV photodetector sensitivity using interdigitated electrodes formalism and embedded gold plasmonic nanoparticles 33
Plasmon-enhanced Graphene/4H–SiC /graphene metal-semiconductor-metal ultraviolet photodetector: Concept and optimization 32
Performance analysis of a thin Pt/n-GaNSchottky barrier ultraviolet photodetector 31
Paths towards high perovskite solar cells stability using machine learning techniques 30
Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors 30
Predicting perovskite solar cell stability by using different machine learning and neural networks approaches 30
Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules 30
Theoretical Simulation on Enhancing the Thin-Film Copper Zinc Tin Sulfide Solar Cell Performance Using MoS2, MoOx, and CuI as Efficient Hole Transport Layers 30
Performance assessment of InGaN-based single, dual, and tri-ple junction solar cells 27
Thorium-228 as emitting source for InGaP/GaAs-based heterojunction alphavoltaic cells 25
Modeling and simulation of an InGaP/GaAs heterojunction betavoltaic cell powered by promethium-147 22
Totale 5.531
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Categoria #
all - tutte 45.531
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 45.531
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021250 0 0 0 0 0 50 11 20 121 47 0 1
2021/2022438 15 1 113 41 15 14 24 68 27 12 32 76
2022/2023825 160 20 27 96 92 140 1 78 142 15 45 9
2023/2024463 37 25 62 8 62 99 12 10 6 14 70 58
2024/20251.365 24 37 140 36 266 82 175 121 138 124 73 149
2025/20262.022 131 403 408 642 270 168 0 0 0 0 0 0
Totale 5.531