PANGALLO, Giovanni
 Distribuzione geografica
Continente #
EU - Europa 102
AS - Asia 72
NA - Nord America 31
AF - Africa 4
SA - Sud America 2
Totale 211
Nazione #
IT - Italia 73
US - Stati Uniti d'America 31
VN - Vietnam 17
JP - Giappone 13
IN - India 12
CN - Cina 11
SG - Singapore 7
LT - Lituania 6
AT - Austria 4
FR - Francia 4
ID - Indonesia 4
UA - Ucraina 3
BR - Brasile 2
CZ - Repubblica Ceca 2
DE - Germania 2
ES - Italia 2
HK - Hong Kong 2
KR - Corea 2
NL - Olanda 2
RU - Federazione Russa 2
UZ - Uzbekistan 2
DZ - Algeria 1
FI - Finlandia 1
GB - Regno Unito 1
IR - Iran 1
KE - Kenya 1
MA - Marocco 1
NG - Nigeria 1
TW - Taiwan 1
Totale 211
Città #
Reggio Calabria 17
Dong Ket 15
Milazzo 11
Taurianova 7
Vibo Valentia 7
Cosenza 5
Gurgaon 5
Tokyo 5
Beijing 4
Boardman 4
Delhi 4
Jakarta 4
Singapore 4
Turin 4
Vienna 4
Ashburn 3
Las Vegas 3
Los Angeles 3
Rome 3
Tappahannock 3
Xi'an 3
Chengdu 2
Durham 2
Fayetteville 2
Gardena 2
Ho Chi Minh City 2
Kherson 2
Martina Franca 2
Moscow 2
Munich 2
Redmond 2
São Bernardo do Campo 2
Woodbridge 2
Absecon 1
Bangalore 1
Bologna 1
Central District 1
Crosia 1
Fleming Island 1
Gangnam-gu 1
Helsinki 1
Khenchela 1
Kowloon 1
Marrakesh 1
Milan 1
Mumbai 1
Nanterre 1
Napoli 1
New Brunswick 1
Palo Alto 1
Paris 1
Pittsburgh 1
Pohang 1
Polistena 1
Reggio Di Calabria 1
Riposto 1
Sekizawa 1
Shenzhen 1
Taichung 1
Uyo 1
Warwick 1
Yokkaichi 1
Zoetermeer 1
Totale 172
Nome #
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047588-2c09-7e24-e053-6605fe0afb29 82
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047588-1391-7e24-e053-6605fe0afb29 41
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047588-318f-7e24-e053-6605fe0afb29 29
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics, file e2047588-3f9a-7e24-e053-6605fe0afb29 18
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure, file e2047586-a72a-7e24-e053-6605fe0afb29 10
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, file e2047587-4868-7e24-e053-6605fe0afb29 5
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode, file e2047588-3696-7e24-e053-6605fe0afb29 5
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents, file e2047588-392f-7e24-e053-6605fe0afb29 5
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors, file e2047588-3d1c-7e24-e053-6605fe0afb29 5
4H-SiC p-i-n diode as highly linear temperature sensor, file e2047587-4865-7e24-e053-6605fe0afb29 3
4H-Sic schottky and p-i-n diode as high performance temperature sensors, file e2047586-d45f-7e24-e053-6605fe0afb29 2
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes, file e2047587-434a-7e24-e053-6605fe0afb29 2
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model, file e2047588-3437-7e24-e053-6605fe0afb29 2
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor, file e2047588-392d-7e24-e053-6605fe0afb29 2
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode, file e2047588-345d-7e24-e053-6605fe0afb29 1
Totale 212
Categoria #
all - tutte 656
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 656


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202170 0 0 2 0 0 2 2 21 19 8 1 15
2021/202245 1 0 4 4 1 4 5 3 2 5 14 2
2022/202355 6 2 3 5 6 3 14 1 2 2 10 1
2023/202442 1 4 0 2 8 3 6 7 0 11 0 0
Totale 212