IRIS
PANGALLO, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 391
EU - Europa 350
AS - Asia 63
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
AF - Africa 1
Totale 810
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Nazione #
US - Stati Uniti d'America 386
IT - Italia 240
VN - Vietnam 47
FI - Finlandia 31
DE - Germania 23
LT - Lituania 20
SE - Svezia 17
CA - Canada 5
AT - Austria 4
JP - Giappone 4
TR - Turchia 4
EU - Europa 3
FR - Francia 3
GB - Regno Unito 3
CH - Svizzera 2
CN - Cina 2
HK - Hong Kong 2
IE - Irlanda 2
AU - Australia 1
BE - Belgio 1
DK - Danimarca 1
EG - Egitto 1
HR - Croazia 1
IN - India 1
KR - Corea 1
LV - Lettonia 1
NL - Olanda 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
SA - Arabia Saudita 1
Totale 810
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Città #
Chandler 114
Reggio Calabria 50
Dong Ket 47
New York 40
Cosenza 36
Helsinki 31
San Mateo 28
Lawrence 19
Milazzo 19
Princeton 19
Martina Franca 14
Wilmington 14
Ashburn 9
Des Moines 8
Ann Arbor 7
Falls Church 5
Cagliari 4
Pittsburgh 4
Tokyo 4
Vienna 4
Bonndorf 3
Traverse City 3
Boardman 2
Brescia 2
Dublin 2
Ferrara 2
Florence 2
Frankfurt am Main 2
Ghemme 2
Guangzhou 2
Hanover 2
Hong Kong 2
Los Angeles 2
Milan 2
Norwalk 2
Randazzo 2
Seattle 2
Toronto 2
Zurich 2
Albignasego 1
Amsterdam 1
Berlin 1
Boston 1
Brussels 1
Cedar Knolls 1
Copenhagen 1
Dalmine 1
Edinburgh 1
Faisalabad 1
Kocaeli 1
Markham 1
Melbourne 1
Muggiò 1
Ottawa 1
Poplar 1
Pune 1
Redmond 1
Reston 1
Riga 1
Riyadh 1
Rome 1
San Francisco 1
Secaucus 1
Seoul 1
Zagreb 1
Totale 542
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Nome #
4H-SiC p-i-n diode as highly linear temperature sensor 91
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 87
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents 65
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes 65
Sistema e metodo per la misura della temperatura di una giunzione a stato solido 64
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes 58
4H-Sic schottky and p-i-n diode as high performance temperature sensors 47
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model 45
A Direct Junction Temperature Measurement Technique for Power LEDs 44
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure 40
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics 39
Use of 4H-SiC-based Diodes as Temperature Sensors 38
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode 35
V2O5/4H-SiC Schottky diode as a high performance PTAT sensor 28
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors 27
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor 26
High perfomance integrated temperature sensor based on amorphous silicon diode for photonics on CMOS 24
Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications 22
Temperature sensor based on 4H-SiC diodes for hostile environments 17
Totale 862
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Categoria #
all - tutte 5.270
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.270
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202050 0 0 0 0 0 0 0 3 0 9 6 32
2020/2021257 1 0 4 1 8 19 0 16 109 52 0 47
2021/2022122 0 0 36 21 3 6 1 14 7 6 9 19
2022/2023266 39 11 17 31 34 47 2 14 45 9 13 4
2023/2024167 18 10 21 3 17 61 7 6 2 22 0 0
Totale 862