IRIS
PANGALLO, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 417
EU - Europa 354
AS - Asia 95
SA - Sud America 18
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
AF - Africa 1
Totale 890
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Nazione #
US - Stati Uniti d'America 412
IT - Italia 241
VN - Vietnam 47
FI - Finlandia 31
DE - Germania 25
SG - Singapore 24
LT - Lituania 21
BR - Brasile 18
SE - Svezia 17
CN - Cina 10
CA - Canada 5
AT - Austria 4
JP - Giappone 4
TR - Turchia 4
EU - Europa 3
FR - Francia 3
GB - Regno Unito 3
CH - Svizzera 2
HK - Hong Kong 2
IE - Irlanda 2
AU - Australia 1
BE - Belgio 1
DK - Danimarca 1
EG - Egitto 1
HR - Croazia 1
IN - India 1
KR - Corea 1
LV - Lettonia 1
NL - Olanda 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
SA - Arabia Saudita 1
Totale 890
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Città #
Chandler 114
Reggio Calabria 50
Dong Ket 47
New York 40
Cosenza 36
Helsinki 31
San Mateo 28
Boardman 19
Lawrence 19
Milazzo 19
Princeton 19
Brasília 18
Martina Franca 14
Wilmington 14
Singapore 13
Ashburn 9
Des Moines 8
Ann Arbor 7
Falls Church 5
Cagliari 4
Phoenix 4
Pittsburgh 4
Tokyo 4
Vienna 4
Bonndorf 3
Traverse City 3
Brescia 2
Dublin 2
Ferrara 2
Florence 2
Frankfurt am Main 2
Ghemme 2
Guangzhou 2
Hanover 2
Hong Kong 2
Los Angeles 2
Milan 2
Norwalk 2
Randazzo 2
Santa Clara 2
Seattle 2
Toronto 2
Zurich 2
Albignasego 1
Amsterdam 1
Berlin 1
Boston 1
Brussels 1
Cedar Knolls 1
Clifton 1
Copenhagen 1
Dallas 1
Dalmine 1
Edinburgh 1
Faisalabad 1
Kocaeli 1
Markham 1
Melbourne 1
Molfetta 1
Muggiò 1
Ottawa 1
Poplar 1
Pune 1
Redmond 1
Reston 1
Riga 1
Riyadh 1
Rome 1
San Francisco 1
Secaucus 1
Seoul 1
Shanghai 1
Zagreb 1
Totale 600
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Nome #
4H-SiC p-i-n diode as highly linear temperature sensor 97
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 95
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents 71
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes 70
Sistema e metodo per la misura della temperatura di una giunzione a stato solido 67
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes 61
4H-Sic schottky and p-i-n diode as high performance temperature sensors 50
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model 50
A Direct Junction Temperature Measurement Technique for Power LEDs 48
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure 46
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics 43
Use of 4H-SiC-based Diodes as Temperature Sensors 40
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode 38
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor 32
V2O5/4H-SiC Schottky diode as a high performance PTAT sensor 31
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors 30
High perfomance integrated temperature sensor based on amorphous silicon diode for photonics on CMOS 27
Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications 25
Temperature sensor based on 4H-SiC diodes for hostile environments 21
Totale 942
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Categoria #
all - tutte 6.342
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.342
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202050 0 0 0 0 0 0 0 3 0 9 6 32
2020/2021257 1 0 4 1 8 19 0 16 109 52 0 47
2021/2022122 0 0 36 21 3 6 1 14 7 6 9 19
2022/2023266 39 11 17 31 34 47 2 14 45 9 13 4
2023/2024232 18 10 21 3 17 61 7 6 2 22 28 37
2024/202515 6 9 0 0 0 0 0 0 0 0 0 0
Totale 942