PANGALLO, Giovanni
 Distribuzione geografica
Continente #
NA - Nord America 482
EU - Europa 364
AS - Asia 127
SA - Sud America 18
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
AF - Africa 1
Totale 997
Nazione #
US - Stati Uniti d'America 476
IT - Italia 243
VN - Vietnam 47
SG - Singapore 36
FI - Finlandia 33
CN - Cina 28
DE - Germania 28
LT - Lituania 22
BR - Brasile 18
SE - Svezia 17
CA - Canada 5
AT - Austria 4
GB - Regno Unito 4
JP - Giappone 4
TR - Turchia 4
EU - Europa 3
FR - Francia 3
IE - Irlanda 3
CH - Svizzera 2
HK - Hong Kong 2
AU - Australia 1
BE - Belgio 1
DK - Danimarca 1
EG - Egitto 1
HR - Croazia 1
IL - Israele 1
IN - India 1
KR - Corea 1
LK - Sri Lanka 1
LV - Lettonia 1
NL - Olanda 1
NZ - Nuova Zelanda 1
PA - Panama 1
PK - Pakistan 1
SA - Arabia Saudita 1
Totale 997
Città #
Chandler 114
Reggio Calabria 50
Dong Ket 47
New York 40
Boardman 38
Cosenza 36
Helsinki 33
San Mateo 28
Santa Clara 28
Singapore 25
Lawrence 19
Milazzo 19
Princeton 19
Brasília 18
Shanghai 17
Martina Franca 14
Wilmington 14
Ashburn 9
Des Moines 8
Ann Arbor 7
Los Angeles 6
Falls Church 5
Cagliari 4
Phoenix 4
Pittsburgh 4
Tokyo 4
Vienna 4
Bonndorf 3
Dublin 3
Frankfurt am Main 3
Traverse City 3
Brescia 2
Ferrara 2
Florence 2
Ghemme 2
Guangzhou 2
Hanover 2
Hong Kong 2
Milan 2
Munich 2
Norwalk 2
Randazzo 2
Seattle 2
Toronto 2
Zurich 2
Albignasego 1
Amsterdam 1
Berlin 1
Boston 1
Brussels 1
Cedar Knolls 1
Clifton 1
Colombo 1
Copenhagen 1
Dallas 1
Dalmine 1
Edinburgh 1
Faisalabad 1
Kocaeli 1
Markham 1
Melbourne 1
Molfetta 1
Muggiò 1
Ottawa 1
Pescara 1
Poplar 1
Pune 1
Qingdao 1
Redmond 1
Reston 1
Riga 1
Riyadh 1
Rome 1
San Francisco 1
Secaucus 1
Seoul 1
Tel Aviv 1
Wuxi 1
Zagreb 1
Totale 688
Nome #
4H-SiC p-i-n diode as highly linear temperature sensor 102
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 102
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents 76
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes 76
Sistema e metodo per la misura della temperatura di una giunzione a stato solido 72
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes 68
4H-Sic schottky and p-i-n diode as high performance temperature sensors 57
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model 57
A Direct Junction Temperature Measurement Technique for Power LEDs 54
Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure 52
Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics 48
Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode 46
Use of 4H-SiC-based Diodes as Temperature Sensors 44
Power MOSFET Intrinsic Diode as a Highly Linear Junction Temperature Sensor 37
V2O5/4H-SiC Schottky diode as a high performance PTAT sensor 35
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors 35
High perfomance integrated temperature sensor based on amorphous silicon diode for photonics on CMOS 32
Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications 29
Temperature sensor based on 4H-SiC diodes for hostile environments 27
Totale 1.049
Categoria #
all - tutte 7.709
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.709


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202050 0 0 0 0 0 0 0 3 0 9 6 32
2020/2021257 1 0 4 1 8 19 0 16 109 52 0 47
2021/2022122 0 0 36 21 3 6 1 14 7 6 9 19
2022/2023266 39 11 17 31 34 47 2 14 45 9 13 4
2023/2024232 18 10 21 3 17 61 7 6 2 22 28 37
2024/2025122 6 11 23 8 56 17 1 0 0 0 0 0
Totale 1.049