In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fab-ricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm2 at −10 V, while the photocurrent density rises to 6.36 µA/cm2 at the same bias under λ = 315 nm ultraviolet (UV) radiation with an incident optical power density of 29.83 µW/cm2 . At the wavelength of λ = 285 nm, the responsivity is maximum, 0.168 A/W at 0 V, and 0.204 A/W at −30 V, leading to an external quantum efficiency of 72.7 and 88.3%, respectively. Moreover, the long-term stability of the photodiode performances has been examined after exposing the device under test to several cycles of thermal stress, from 150 up to 350◦C and vice versa. The achieved results prove that the examined high-efficiency UV photodiode also has a stable responsivity if subjected to high temperature variations. The proposed device is fully compatible with the conventional production process of 4H-SiC components.

An efficient 4h-sic photodiode for uv sensing applications

Mallemace E. D.;Rao S.
;
Pezzimenti F.;Della Corte F. G.
2021-01-01

Abstract

In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fab-ricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm2 at −10 V, while the photocurrent density rises to 6.36 µA/cm2 at the same bias under λ = 315 nm ultraviolet (UV) radiation with an incident optical power density of 29.83 µW/cm2 . At the wavelength of λ = 285 nm, the responsivity is maximum, 0.168 A/W at 0 V, and 0.204 A/W at −30 V, leading to an external quantum efficiency of 72.7 and 88.3%, respectively. Moreover, the long-term stability of the photodiode performances has been examined after exposing the device under test to several cycles of thermal stress, from 150 up to 350◦C and vice versa. The achieved results prove that the examined high-efficiency UV photodiode also has a stable responsivity if subjected to high temperature variations. The proposed device is fully compatible with the conventional production process of 4H-SiC components.
2021
4H-SiC
P-i-n photodiode
Responsivity
Temperature effect
File in questo prodotto:
File Dimensione Formato  
Megherbi_2021_Electronics_Efficient_Editor.pdf

accesso aperto

Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 3.36 MB
Formato Adobe PDF
3.36 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/111920
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 8
social impact