In this paper, a two-dimensional (2D) numerical simulation study of a p+-n-n+ AlGaN-based ultraviolet (UV) photodetector, which is designed to achieve true solar blindness with a cutoff wavelength of 0.31 µm, is presented. The device performance is evaluated by investigating both the current density-voltage characteristics and the spectral response (SR). The proposed structure is optimized in terms of the fundamental geometrical and doping parameters. During the simulations, it was found that the detector is sensitive to the UV rays in the 0.155-0.37 µm wavelength range and the spectral response can reach 0.156 AW-1 under a light intensity of 1 Wcm-2 at zero-bias voltage and room temperature. This SR peak value increases further under reverse bias conditions. The temperature effect on the detector SR and the impact of an explicit trap concentration located into the p+ and n region are also investigated. The spectral response decreases for a temperature exceeding 420 K. At the same time, the SR reference values begin to be affected only for acceptor and donor trap densities that are much higher than the local (total) doping concentration.

Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector / Bouzid, F.; Dehimi, L.; Pezzimenti, F.; Hadjab, M.; Larbi, A. H.. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - 122:(2018), pp. 57-73. [10.1016/j.spmi.2018.08.022]

Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector

F. PEZZIMENTI;
2018-01-01

Abstract

In this paper, a two-dimensional (2D) numerical simulation study of a p+-n-n+ AlGaN-based ultraviolet (UV) photodetector, which is designed to achieve true solar blindness with a cutoff wavelength of 0.31 µm, is presented. The device performance is evaluated by investigating both the current density-voltage characteristics and the spectral response (SR). The proposed structure is optimized in terms of the fundamental geometrical and doping parameters. During the simulations, it was found that the detector is sensitive to the UV rays in the 0.155-0.37 µm wavelength range and the spectral response can reach 0.156 AW-1 under a light intensity of 1 Wcm-2 at zero-bias voltage and room temperature. This SR peak value increases further under reverse bias conditions. The temperature effect on the detector SR and the impact of an explicit trap concentration located into the p+ and n region are also investigated. The spectral response decreases for a temperature exceeding 420 K. At the same time, the SR reference values begin to be affected only for acceptor and donor trap densities that are much higher than the local (total) doping concentration.
2018
AlGaN, Numerical Simulation, Photodetector, Spectral Response, Trap Density
File in questo prodotto:
File Dimensione Formato  
Bouzid_2018_S&M_Numerical_editor.pdf

non disponibili

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 5.19 MB
Formato Adobe PDF
5.19 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Bouzid_2018_S&M_Numerical_post.pdf

Open Access dal 29/08/2020

Tipologia: Documento in Post-print
Licenza: Creative commons
Dimensione 875.52 kB
Formato Adobe PDF
875.52 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/3017
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 25
  • ???jsp.display-item.citation.isi??? 23
social impact