A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80 K. The proposed sensor shows a sensitivity of 307 μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.

A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

Sandro Rao
;
Giovanni Pangallo;Francesco Della Corte
2018-01-01

Abstract

A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80 K. The proposed sensor shows a sensitivity of 307 μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.
Schottky diodes, Sensor system and applications, Silicon carbide, Silicon compounds, Temperature sensors
File in questo prodotto:
File Dimensione Formato  
Rao et al. - 2018 - Sensors and Actuators A Physical A V 2 O 5 4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bi.pdf

non disponibili

Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 1.04 MB
Formato Adobe PDF
1.04 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/3332
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 13
  • ???jsp.display-item.citation.isi??? 11
social impact