A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80 K. The proposed sensor shows a sensitivity of 307 μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.

A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents / Rao, Sandro; Pangallo, Giovanni; Di Benedetto, Luigi; Rubino, Alfredo; Domenico Licciardo, Gian; DELLA CORTE, Francesco Giuseppe. - In: SENSORS AND ACTUATORS. A, PHYSICAL. - ISSN 0924-4247. - 269:(2018), pp. 171-174. [10.1016/j.sna.2017.11.026]

A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

Sandro Rao
;
Giovanni Pangallo;Francesco Della Corte
2018-01-01

Abstract

A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80 K. The proposed sensor shows a sensitivity of 307 μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.
2018
Schottky diodes, Sensor system and applications, Silicon carbide, Silicon compounds, Temperature sensors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/3332
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