A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80 K. The proposed sensor shows a sensitivity of 307 μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.
|Titolo:||A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents|
RAO, Sandro (Corresponding)
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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|Rao et al. - 2018 - Sensors and Actuators A Physical A V 2 O 5 4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bi.pdf||Versione Editoriale (PDF)||Tutti i diritti riservati (All rights reserved)||Administrator Richiedi una copia|