Electro-optical modulation of a 1550 nm wavelength carrier is observed and characterized in a 4H-SiC epitaxial layer which is part of a 600 V breakdown voltage commercial Schottky diode. Experimental evidence of a phase shift has been obtained within an interferometric structure, however not designed for such purposes. The amplitude modulation is induced both in dc and switching operation by means of plasma dispersion effect, and specifically by carrier depletion of the epitaxial layer, when a reverse bias is applied to the metal/4H-SiC(n)/4H-SiC(n+)/metal vertical rectifying structure. The contribution arising from the electrically induced free-carrier concentration variation yields a figure of merit Vπ × Lπ equal to 53.6 V × cm.

Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode / Della Corte, F.; Giglio, I.; Pangallo, G.; Rao, Sandro. - In: IEEE PHOTONICS TECHNOLOGY LETTERS. - ISSN 1041-1135. - 30:9(2018), pp. 877-880. [10.1109/LPT.2018.2823421]

Electro-Optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode

F. Della Corte;I. Giglio;G. Pangallo;Rao Sandro
2018-01-01

Abstract

Electro-optical modulation of a 1550 nm wavelength carrier is observed and characterized in a 4H-SiC epitaxial layer which is part of a 600 V breakdown voltage commercial Schottky diode. Experimental evidence of a phase shift has been obtained within an interferometric structure, however not designed for such purposes. The amplitude modulation is induced both in dc and switching operation by means of plasma dispersion effect, and specifically by carrier depletion of the epitaxial layer, when a reverse bias is applied to the metal/4H-SiC(n)/4H-SiC(n+)/metal vertical rectifying structure. The contribution arising from the electrically induced free-carrier concentration variation yields a figure of merit Vπ × Lπ equal to 53.6 V × cm.
2018
Electro-optic modulators, optical modulation, Schottky diodes, silicon carbide
File in questo prodotto:
File Dimensione Formato  
Corte et al. - 2018 - Electro-optical Modulation in a 4H-SiC Slab Induced by Carrier Depletion in a Schottky Diode.pdf

non disponibili

Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 1.18 MB
Formato Adobe PDF
1.18 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/4643
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 8
  • ???jsp.display-item.citation.isi??? 6
social impact