The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 µV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes / Rao, Sandro; Pangallo, Giovanni; DELLA CORTE, Francesco Giuseppe. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:11(2015), pp. 7275118.1205-7275118.1208. [10.1109/LED.2015.2481721]
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes
Sandro Rao
;Giovanni Pangallo;Francesco Della CorteMembro del Collaboration Group
2015-01-01
Abstract
The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 µV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.File | Dimensione | Formato | |
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