The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 µV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.

Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes / Rao, Sandro; Pangallo, Giovanni; DELLA CORTE, Francesco Giuseppe. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:11(2015), pp. 7275118.1205-7275118.1208. [10.1109/LED.2015.2481721]

Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes

Sandro Rao
;
Giovanni Pangallo;Francesco Della Corte
Membro del Collaboration Group
2015-01-01

Abstract

The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 µV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.
2015
P-i-n diodes, power semiconductor devices, silicon carbide, temperature sensors
File in questo prodotto:
File Dimensione Formato  
EDL 2015-11.pdf

non disponibili

Descrizione: articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 214.46 kB
Formato Adobe PDF
214.46 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
proof LED2481721------.pdf

accesso aperto

Tipologia: Documento in Post-print
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 493.21 kB
Formato Adobe PDF
493.21 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/5964
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 33
  • ???jsp.display-item.citation.isi??? 28
social impact