Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.
|Titolo:||Integrated amorphous silicon p-i-n temperature sensor for CMOS photonics|
RAO, Sandro (Corresponding)
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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|Rao_2016_Sensors-16-00067-v2_Integrated_Editor.pdf||Versione Editoriale (PDF)||Open Access Visualizza/Apri|