The evolution of engineering applications is increasingly shifting towards the embedded nature, resulting in low-cost solutions, micro/nano dimensional and actuators being exploited as fundamental components to connect the physical nature of information with the abstract one, which is represented in the logical form in a machine. In this context, the scientific community has gained interest in modeling membrane Micro-Electro-Mechanical-Systems (MEMS), leading to a wide diffusion on an industrial level owing to their ease of modeling and realization. Physically, once the external voltage is applied, an electrostatic field, orthogonal to the tangent line of the membrane, is established inside the device, producing an electrostatic pressure that acts on the membrane, deforming it. Evidently, the greater the amplitude of the electrostatic field is, the greater the curvature of the membrane. Thus, it seems natural to consider the amplitude of the electrostatic field proportional to the curvature of the membrane. Starting with this principle, the authors are actively involved in developing a second-order semi-linear elliptic model in 1D and 2D geometries, obtaining important results regarding the existence, uniqueness and stability of solutions as well as evaluating the particular operating conditions of use of membrane MEMS devices. In this context, the idea of providing a survey matures to discussing the similarities and differences between the analytical and numerical results in detail, thereby supporting the choice of certain membrane MEMS devices according to the industrial application. Finally, some original results about the stability of the membrane in 2D geometry are presented and discussed.
|Titolo:||Curvature-Dependent Electrostatic Field as a Principle for Modelling Membrane-Based MEMS Devices. A Review|
VERSACI, Mario (Corresponding)
|Data di pubblicazione:||2020|
|Appare nelle tipologie:||1.1 Articolo in rivista|